Abstract: Quantum dots (QDs) have attracted tremendous interest due to their excellent optical properties such as broad tunable emission, high color purity and quantum yield, and are employed in display application as emission layer. Cd-based QDs are generally usedin the commercial application for their narrow full width at half maximum (FWHM) of photo luminescent (PL) spectrum could be lower than 20 nm, high quantum yield (QY) up to about 100%. But the toxic heavy metal Cd is restricted in the actual application. Therefore, heavy metal free indium phosphine (InP) QDs is an attractive alternative for their relatively high color purity and high fluorescence. However, the optical properties of InP QDs and InP QDs based LED are worse than those of Cd-based QDs and Cd-based QLED, respectively. In the past few years, great improvement has been made through the control of precursors reactivity and the surface oxidation, effective growth of shell, and its FWHM could be as narrow as 35 nm, QY could be raised to ~93%. Moreover, external quantum yield (EQE) of InP QDs based LED have been greatly improved form the promoting of QLED structure from 0.008% to 12%. To obtain InP QDs with high color purity, the precursors reactivity has been effective control through employing different kinds of phosphine precursor and different P∶In ratio, and the surface oxidation have been greatly inhibited through long time vacuum. To obtain InP QDs with high quantum yield, indium incorporation has been avoided during epitaxial growth of shell, and entropic ligands were introduced. After using InP QDs with excellent optical properties as emission layer, the electron and hole transporting layers with optimized structure, InP QDs based QLED have been obtained with both high EQE and luminescence. This review summarizes recent research development on how to obtain InP QDs with concurrent high color purity and PL QY. And the improvement of display application of InP QDs are also introduced. Finally, the challenges as well as the future directions of synthetic method and application in display are discussed.
作者简介: 林拱立,上海交通大学材料科学与工程学院&金属基复合材料国家重点实验室硕士研究生,师从李万万研究员。目前主要从事磷化铟量子点材料的设计、制备及其在光电器件方面的应用研究。 杨志文,于2011年获得大连理工大学材料科学与工程学院硕士学位。目前为上海交通大学材料科学与工程学院&金属基复合材料国家重点实验室博士研究生,师从李万万研究员。主要从事量子点的设计、制备及其在光电器件方面的应用研究。 李万万,上海交通大学研究员,博士研究生导师。于2004年获得上海大学材料学博士学位,2005年加入上海交通大学材料科学与工程学院&金属基复合材料国家重点实验室,2013年升任研究员。他的研究涉及量子点材料的设计、制备及其在光电器件方面的应用研究,有机-无机微纳米功能复合材料及其在生物医学诊断和治疗中的应用。他已在科学同行评审的国际期刊上发表了70多篇文章,包括Chemical Society Reviews、Materials Today、Advanced Materials、Angewandte Chemie International Edition、ACS Nano、Advanced Functional Materials和Materials Horizons等。
引用本文:
林拱立, 杨志文, 李万万. 磷化铟量子点的合成及其显示器件应用研究进展[J]. 材料导报, 2020, 34(23): 23057-23063.
LIN Gongli, YANG Zhiwen, LI Wanwan. Progress on Synthesis and Display Application of Indium Phosphide Quantum Dots. Materials Reports, 2020, 34(23): 23057-23063.
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