二氧化钒金属-绝缘相变的回线宽度及其调控研究进展

doi:10.11896/cldb.21050100

材料导报

2023, Vol. 37

Issue (6): 21050100-10 https://doi.org/10.11896/cldb.21050100

金属与金属基复合材料

二氧化钒金属-绝缘相变的回线宽度及其调控研究进展

张化福^1,*, 周爱萍¹, 吴志明², 蒋亚东²

1 山东理工大学物理与光电工程学院,山东淄博 255049
2 电子科技大学光电科学与工程学院,电子薄膜与集成器件国家重点实验,成都 610054

Research Progress on the Hysteresis Width and Its Modulation of Metal-Insulator Phase Transition of Vanadium Dioxide

ZHANG Huafu^1,*, ZHOU Aiping¹, WU Zhiming², JIANG Yadong²

1 School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, Shandong, China
2 State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

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摘要优异的金属-绝缘相变性能使得二氧化钒(VO₂)具有广阔的应用前景。回线宽度是影响VO₂实际应用的一个重要指标,不同类型的器件对回线宽度的要求不同。传感类器件要求VO₂的回线宽度要尽量小,而存储类器件则要求VO₂具有较大的回线宽度。为了满足不同器件的应用要求,研究人员已通过磁控溅射法、溶胶-凝胶法、聚合物辅助沉积法和脉冲激光沉积法等方法制备了VO₂,并对其回线宽度进行了研究。本文先从形貌(颗粒大小、颗粒形状和晶界)、元素掺杂和择优取向三个方面对回线宽度的研究进行了总结;然后,对二氧化钒回线宽度的调控机理进行了讨论;最后,指出当前研究中的不足,并对将来的工作进行了展望。

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关键词: 回线宽度二氧化钒金属-绝缘相变薄膜智能窗光电开关光存储器表面形貌

Abstract: Vanadium dioxide (VO₂) has potential applications in many fields due to its excellent metal-insulator phase transition. The hysteresis width plays an important role in practical applications owing to the fact that different devices require different hysteresis width. For sensor-type devices, a smaller hysteresis width is required in order to run these devices reliably and efficiently. However, for storage-type devices, a relatively larger hysteresis width is required. In order to meet the needs of the different devices, VO₂ has been prepared by magnetron sputtering, sol-gel, polymer-assisted deposition and pulsed laser deposition, and great efforts have been made to investigate the hysteresis width. This article systematically reviews the recent research progress in regulating the hysteresis width of VO₂. Firstly, the influence of the surface morphology (grain size, grain shape and grain boundaries), element doping and preferential orientation on the hysteresis width is summarized. Then, the modulation mechanism of the hysteresis width is discussed. Finally, suggestions as well as perspectives for the future are provided.

Key words: hysteresis width vanadium dioxide metal-insulator phase transition thin film smart window optoelectronic switching optical storage device surface morphology

发布日期: 2023-03-27

ZTFLH:

TN213

基金资助: 国家自然科学基金重点项目(61235006)

通讯作者: *张化福,山东理工大学物理与光电工程学院副教授、硕士研究生导师。2002年7月本科毕业于鲁东大学物理系,2005年于电子科技大学光学专业硕士毕业后到山东理工大学工作至今,2014年12月取得电子科技大学光学工程博士学位。目前,主要从事光电材料与器件的研究,发表论文20余篇。huafuzhang@126.com

引用本文:

张化福, 周爱萍, 吴志明, 蒋亚东. 二氧化钒金属-绝缘相变的回线宽度及其调控研究进展[J]. 材料导报, 2023, 37(6): 21050100-10.
ZHANG Huafu, ZHOU Aiping, WU Zhiming, JIANG Yadong. Research Progress on the Hysteresis Width and Its Modulation of Metal-Insulator Phase Transition of Vanadium Dioxide. Materials Reports, 2023, 37(6): 21050100-10.

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http://www.mater-rep.com/CN/10.11896/cldb.21050100 或 http://www.mater-rep.com/CN/Y2023/V37/I6/21050100

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