原子层沉积法制备SnO2薄膜及其对钙钛矿电池性能的影响

doi:10.11896/cldb.20110236

材料导报

2022, Vol. 36

Issue (7): 20110236-6 https://doi.org/10.11896/cldb.20110236

无机非金属及其复合材料

原子层沉积法制备SnO₂薄膜及其对钙钛矿电池性能的影响

明帅强^1,2,3, 王浙加³, 吴鹿杰^1,4, 冯嘉恒³, 高雅增^1,2, 卢维尔^1,2, 夏洋^1,2

1 中国科学院微电子研究所微电子仪器设备研究中心,北京 100029
2 中国科学院大学微电子学院,北京 101407
3 嘉兴科民电子设备技术有限公司,浙江嘉兴 314022
4 北京交通大学理学院,北京 100044

SnO₂ Thin Film Prepared by Atomic Layer Deposition Technology and Its Effect on the Performance of Perovskite Solar Cells

MING Shuaiqiang^1,2,3, WANG Zhejia³, WU Lujie^1,4, FENG Jiaheng³, GAO Yazeng^1,2, LU Weier^1,2, XIA Yang^1,2

1 Microelectronic Instrument and Equipment Research Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 101407, China
3 Jiaxing Kemin Electronic Equipment Technology Co., Ltd., Jiaxing 314022,Zhejiang, China
4 School of Science,Beijing Jiaotong University, Beijing 100044, China

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摘要本工作以单晶硅为衬底、四(二甲氨基)锡和水为前驱体,研究原子层沉积技术制备氧化锡薄膜的工艺及其光学和电学性能,并将其应用于钙钛矿太阳能电池。通过调节基底温度,详细研究了沉积温度对SnO₂薄膜的沉积速率、电学、光学等特性的影响,采用钙钛矿太阳能电池器件辅助验证SnO₂薄膜的性能。研究发现,随着基底温度的升高,沉积速率逐渐下降,原子层沉积的温度窗口在120~250 ℃;折射率随着温度的升高逐渐增大,带隙随温度升高而减小;沉积温度越高,表面氧空位缺陷浓度越大。SnO₂薄膜的工艺温度对钙钛矿太阳能电池性能有较大影响,采用160 ℃沉积的SnO₂薄膜作钙钛矿太阳能电池的电子传输层,可获得最优的电池性能,反扫最高效率为18.68%,此时器件的截止电压为1.077 V,短路电流密度为23.67 mA/cm²,填充因子为73.3%,且器件具有较小的迟滞效应。

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	明帅强
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	高雅增
	卢维尔
	夏洋

关键词: 原子层沉积氧化锡薄膜生长速率氧空位钙钛矿太阳能电池

Abstract: In this work, tin oxide (SnO₂) thin film was prepared through atomic layer deposition technology with monocrystalline silicon as substrate, te-trakis (dimethylamino) tin and water as the precursor sources. Its optical, electrical properties and application in perovskite solar cell devices were characterized. Through adjusting the temperature of substrates, the effect of deposition temperature on SnO₂ film deposition rate, and electrical and optical properties were studied in detail, and the performance of perovskite solar cells was analyzed. The results indicate that with tetrakis (dimethylamino) tin and water as precursors, the deposition rate decreases gradually with the increase of temperature, and the atomic layer deposition temperature window is between 120 ℃ and 250 ℃; the refractive index also increases with temperature. As the temperature increases gradually, the band gap decreases; the higher the deposition temperature is, the higher the surface oxygen vacancy concentration is. The SnO₂ thin film deposited at 160 ℃ was used to prepare the perovskite solar cell device, which obtained a champion efficiency (18.68%), with a cut-off voltage of 1.077 V, a short-circuit current density of 23.67 mA/cm² and a fill factor of 73.3%. The device has less hysteresis effect.

Key words: atomic layer deposition tin oxide thin film growth rate oxygen vacancy perovskite solar cell

发布日期: 2022-04-07

ZTFLH:

TB321

基金资助: 国家重点研发计划(2018YFF0109100);国家自然科学基金(61427901)

通讯作者: luweier@ime.ac.cn

作者简介: 明帅强,2018年6月毕业于温州大学,获得硕士学位。于2018年9月至2021年7月在中国科学院微电子研究所攻读博士学位,主要从事二维材料和微电子元件领域的研究。
卢维尔,中国科学院微电子研究所,副研究员。2012年7月毕业于中国科学院理化技术研究所,获材料学博士专业学位,同年加入中国科学院微电子研究所微电子仪器设备实验室工作至今,主要从事薄膜沉积创新原理设备与工艺的研发,重点研究微纳薄膜、二维材料及器件的制备、表征以及应用。在国内外重要期刊发表文章20多篇,申报发明专利20余项。

引用本文:

明帅强, 王浙加, 吴鹿杰, 冯嘉恒, 高雅增, 卢维尔, 夏洋. 原子层沉积法制备SnO₂薄膜及其对钙钛矿电池性能的影响[J]. 材料导报, 2022, 36(7): 20110236-6.
MING Shuaiqiang, WANG Zhejia, WU Lujie, FENG Jiaheng, GAO Yazeng, LU Weier, XIA Yang. SnO₂ Thin Film Prepared by Atomic Layer Deposition Technology and Its Effect on the Performance of Perovskite Solar Cells. Materials Reports, 2022, 36(7): 20110236-6.

链接本文:

http://www.mater-rep.com/CN/10.11896/cldb.20110236 或 http://www.mater-rep.com/CN/Y2022/V36/I7/20110236

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