Preparation of Tantalum Oxide Thin Films by Atomic Layer Deposition Technique and Their Property Characterization
MING Shuaiqiang1,2, WEN Qingtao1,3, GAO Yazeng1,2, YAN Meiju1,3, LU Weier1,2,4, XIA Yang1,2
1 Microelectronic Instrument and Equipment Research Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 2 University of Chinese Academy of Sciences, Beijing 101407, China 3 College of Science, Beijing Jiaotong University, Beijing 100044, China 4 Beijing Research Center of Engineering and Technology of Instrument and Equipment for Microelectronics Fabrication,Beijing 100029, China
Abstract: In this paper, the preparation and properties of tantalum oxide thin films by atomic layer deposition technology were studied using single crystal silicon as substrate, tantalum ethoxide and deionized water as tantalum and oxygen source, respectively. The effects of tantalum ethoxide source bottle temperature, substrate temperature and tantalum ethoxide pulse time on the growth rate, roughness and surface morphology of the obtained tantalum oxide thin films were investigated. The results of ellipsometry, atomic force microscopy, scanning electron microscopy and high resolution X-ray photoelectron spectroscopy show that, when tantalum ethoxide was using as the tantalum source, the surface of obtained tantalum oxide thin film are smooth and the roughness is less than 1 nm. The film growth rate is greatly depended on the process conditions. The best overall performance of tantalum oxide thin film was prepared at tantalum ethoxide source temperature, the pulse time and the substrate temperature of 170 ℃, 0.1 s and 200 ℃, respectively. In this condition, the film growth rate is 0.253 Å/cycle. The investigation of the preparation process of high performance tantalum oxide thin film by atomic layer deposition technique based on tantalum ethoxide would lay a foundation for the application in the field of dielectric material, storage medium and optical coating.
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2021, Vol. 35 
