RESEARCH PAPER |
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Effects of Bulk Electrical Resistivity and Doping Type of Silicon on the Electrochemical Performance of Lithium-ion Batteries with Silicon/Graphite Anodes |
JIN Chenxin, XU Guojun, LIU Liekai, YUE Zhihao, LI Xiaomin,TANG Hao, ZHOU Lang
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Institute of Photovoltaics, Nanchang University, Nanchang 330031 |
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Abstract n-Type silicon wafers with bulk electrical resistivity of 1 Ω·cm, 0.1 Ω·cm, 0.01 Ω·cm and 0.001 Ω·cm and p-type silicon wafers with bulk electrical resistivity of 1 Ω·cm and 0.001 Ω·cm were separately ball-milled to form six different types of silicon powders, which were subsequently mixed with graphite powders at a weight ratio of 5∶95 respectively in order for serving as anode materials in lithium-ion batteries (LIBs). The effects of bulk electrical resistivity and doping types of silicon materials on the anodes’ electrochemical performances in LIBs were investigated through the electrochemical impedance spectra and rate tests. The results showed that silicon with lower bulk electrical resistivity exhibits higher capacity and better rate performance. Besides, n-type doped silicon has higher capacity and better rate performance than those of p-type doped silicon with the same bulk electrical resistivity. In addition, if the bulk electrical resistivity of p-type doped silicon is much lower than that of n-type doped silicon, p-type doped silicon can perform better in electrochemical properties. The sample prepared from 0.001 Ω·cm n-type-Si wafer achieves the highest discharge and charge capacities (543.4 mAh·g-1 and 457.7 mAh·g-1, respectively) during the first cycle.
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Published: 08 May 2018
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