Research Progress of Graphene/Silicon Schottky Junction Solar Cells
LIU Jiasen1, CHEN Xiuhua1,*, LI Shaoyuan2, MA Wenhui2, LI Yi1, HU Huanran1, MA Zhuang1
1 College of Materials Science and Engineering, Yunnan University, Kunming 650091, China 2 National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
Abstract: Solar cells directly convert light energy into electricity by photovoltaic effect, which can effectively solve future energy crisis and environmental pollution, and conform to the concept of sustainable development. Traditional silicon-based solar cells need high-temperature process, which is complex, and the cost of power generation can not compete with thermal power and hydropower. In order to solve these problems, researchers have developed many novel solar cells in recent years to reduce the manufacturing cost. Among them, graphene/silicon Schottky junction solar cells with graphene as transparent electrode are considered as a new generation of low-cost and high-efficiency solar cells. However, the efficiency of graphene/silicon Schottky junction solar cells are much lower than that of traditional silicon-based solar cells due to its low work function, high sheet resistance, serious recombination of charge carriers along the interface, and high plane silicon reflectivity. Therefore, in recent years, the main research focuses on the graphene doping modification, suppressing carrier recombination at the interface and the reduction of reflectivity of devices. At present, the photoelectric conversion efficiency (PCE) of graphene/silicon Schottky junction solar cells has increased from 1.65% to 16.61%. At present, the successful application of graphene dopants to improve the performance of devices mainly includes HNO3, metal nanoparticles, bis(trifluoromethanesulfonyl)-amide(TFSA) and so on. Among them, HNO3 is the most widely used, but its stability is poor. Physical doping such as metal nanoparticles can simultaneously improve the PCE and stability of the device. The introduction of Al2O3, MoS2, quantum dots and other interface layers and surface passivation between graphene and silicon can effectively reduce the suspended bonds on the silicon surface and inhibit carrier recombination, so as to improve the performance of devices. In addition, by introducing antireflective films such as TiO2, PMMA, MgF2/ZnS on the surface of graphene, or introducing microstructures such as nanowires and porous silicon on the surface of silicon, the researchers can reduce the reflectivity of the device and improve the utilization of light. In this paper, the research progress of graphene/silicon solar cells in recent years is summarized, and the structure and principle of the device are briefly introduced, with emphasis on graphene doping, graphene layer selection, nano or micro structure of silicon, antireflection film and interface optimization. The problems and prospects of commercialization of graphene/silicon Schottky junction solar cells are analyzed, in order to provide some reference for the preparation of novel graphene/silicon Schottky junction solar cells with high efficiency and strong stability.
刘家森, 陈秀华, 李绍元, 马文会, 李毅, 胡焕然, 马壮. 石墨烯/硅肖特基结太阳能电池的研究进展[J]. 材料导报, 2021, 35(9): 9115-9122.
LIU Jiasen, CHEN Xiuhua, LI Shaoyuan, MA Wenhui, LI Yi, HU Huanran, MA Zhuang. Research Progress of Graphene/Silicon Schottky Junction Solar Cells. Materials Reports, 2021, 35(9): 9115-9122.
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