CVD Synthesis and Growth Mechanism Study of Monolayer Tungsten Diselenide Films
HU Dongdong1,2, SONG Shupeng1,2,*, LIU Junnan2, BI Jiangyuan2, DING Xing2
1 State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081,China 2 College of Material and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081,China
Abstract: Tungsten diselenide(WSe2)is a semiconductor material with wide band gap, and its structure is similar to that of graphene. It has potential applications in many fields such as complementary logic circuits, field effect transistors and gas sensors, due to the excellent photoelectric characteristics. In this work, large-area and high-quality monolayer WSe2 films were prepared by chemical vapor deposition(CVD). The films were characterized by XPS, AFM and Raman. The effects of the distance from substrate to tungsten source and growth temperature on the morphology, size and nucleation density of the samples were investigated. The growth mechanism of WSe2 films with different morphologies was interpreted by different n(W) ∶n(Se)(≫0.5, >0.5, =0.5)from the perspective of crystal growth, which provided a reference for the optimization of the fabrication process of two-dimensional semiconductor monolayer films.
1 Novoselov K S, Geim A K, Morozov S V, et al. Science, 2004, 306(5696), 666. 2 Cui S, Pu H, Wells S A, et al. Nature Communications, 2015, 6, 8632. 3 Pak Y, Lim N, Kumaresan Y, et al. Advanced Materials, 2016, 27(43), 6945. 4 Neto A, Guinea F, Peres N, et al. Reviews of Modern Physics, 2009, 244(11), 4106. 5 Wang Q H, Kalantar-Zadeh K, Kis A, et al. Nature Nanotechnology, 2012, 7(11), 699. 6 Whitwick M B, Kis A, Radisavljevic B. ACS Nano, 2011, 5(12), 9934. 7 Li S Z, Huang X, Zhang H, et al. Acta Chimica Sinica, 2015, 73(9), 913(in Chinese). 李绍周, 黄晓, 张华, 等. 化学学报, 2015, 73(9), 913. 8 Geim A K, Novoselov K S. Nature Materials, 2009, 6(12), 11. 9 Coleman J N, Lotya M, O'Neill A, et al. Science, 2011, 331(6017), 568. 10 Li Z H, Luo W K, Yang Q K, et al. Acta Physica Sinica, 2017(10), 229(in Chinese). 李忠辉, 罗伟科, 杨乾坤, 等. 物理学报, 2017(10), 229. 11 Mattevi C, Kim H, Chhowalla M. Journal of Materials Chemistry, 2011, 13(7), 362. 12 Huang J K, Pu J, Hsu C L, et al. ACS Nano, 2014, 8(1), 923. 13 Hu S, Li J, Zhan X Y, et al. Science China Materials, 2020, 63(6), 1065. 14 Pudasaini P R, Stanford M G, Oyedele A. Nano Research, 2017(2), 1. 15 Bhaskaran H, Warner J,Wang S, et al. Chemistry of Materials, 2014, 26(22), 6371. 16 Liu K K, Zhang W, Lee Y H, et al. Nano Letters, 2012, 12(3), 1538. 17 Wang H, Zhu D, Jiang F, et al. Nanotechnology, 2018, 12(3), 126. 18 Corro E D, Terrones H, Elias A, et al. ACS Nano, 2014, 8(9), 9629. 19 Wang H, Zhu D, Jiang F, et al. Nanotechnology, 2018, 29(31), 229. 20 Sun M X, Xie D, Sun Y L, et al. Nanotechnology, 2017, 29(1), 365. 21 Morozov Y V, Kuno M. Applied Physics Letters, 2015, 107(8), 197. 22 Ross J S, Klement P, Jones A M, et al. Nature Nanotechnology, 2014, 9(4), 268. 23 Kang K H, Choi B K, Kim J, et al. New Physics Sae Mulli, 2015, 65(7), 633. 24 Gang H L. Small, 2013, 9(11), 1974. 25 Shtansky D V, Sheveyko A N, Sorokin D I, et al. Surface & Coatings Technology, 2008, 202(24), 5953. 26 Wang S, Pacios M, Bhaskaran H, et al. Nanotechnology, 2016, 27(8), 085604. 27 Fang H,Chuang S, Chang T C, et al. Nano Letters, 2012, 12(7), 3788. 28 Pudasaini P R, Stanford M G, Oyedele A. Nano Research, 2017, 8(2), 1. 29 Chen H, Zhang J C, Liu X T, et al. Acta Physico-Chimica Sinica, 2021, 37(15), 1. 30 Bhaviripudi S, Jia X, Dresselhaus M S, et al. Nano Letters, 2010, 10(10), 4128. 31 Loumagne F, Langlais F, Naslain R. Journal of Crystal Growth, 1995, 155(3-4), 205. 32 Lu C Y, Chen L F, Zhao C N, et al. Materials Science ＆ Technology, 2010(4), 5. 卢翠英, 成来飞, 赵春年, 等. 材料工艺与科学, 2010(4),5. 33 De Yoreo J J, Vekilov P G. Reviews in Mineralogy and Geochemistry, 2003, 54(1), 57. 34 Das S, Chen H Y, Penumatcha A V, et al. Nano Letters, 2013, 13(1), 100.
渝公网安备50019002502923号 版权所有：《材料导报》编辑部
2023, Vol. 37 
