Preparation Process of the Single Crystal Graphene with Different Sizes by Chemical Vapor Deposition
WANG Yanwei1,2, LU Wei'er1,3,4, YAN Meiju1,2, XIA Yang1,3,4,5
1 Microelectronic Instrument and Equipment Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; 2 School of Science, Beijing Jiaotong University, Beijing 100044, China; 3 Beijing Research Center of Engineering and Technology of Instrument and Equipment for Microelectronics Fabrication, Beijing 100029, China; 4 Beijing Key Laboratory of IC Test Technology, Beijing 100029, China; 5 University of Chinese Academy of Sciences, Beijing 101407, China
Abstract: Preparation and properties of the single crystal graphene with different sizes on the copper substrates have been investigated. The effects of copper substrate pretreatment method, gas flow rate, pressure and growth time on the size and surface morphology of single crystal graphene were compared. Ar and O2 pretreatment can reduce graphene nucleation density, and appropriate CH4 concentration facilitates the growth of single crystal graphene. The chamber vacuum could modulate the morphology of single crystal graphene and the growth time decides the graphene sizes. By adjusting the parameters of pretreatment gas and flow rate, growth pressure and time, a reliable preparation process of single crystal graphene with the sizes between 0.01—6 mm has been obtained. The single crystal graphene with the size of 6 mm was prepared under the conditions of 101.325 kPa, Ar and O2 pretreatment, 1 068 ℃, 600 sccm H2 and 25 sccm CH4. In addition, the formation mechanism of impurity particles during the graphene preparation process has also been studied. It might be due to that the oxidation of the copper substrate and the Si atoms fell off from the quartz tube during the high temperature. The reliable preparation of single-crystal graphene of different size could open up broad prospect for the application of new graphene electronic devices.
王延伟, 卢维尔, 闫美菊, 夏洋. 化学气相沉积技术制备亚厘米尺寸单晶石墨烯的工艺研究[J]. 材料导报, 2020, 34(6): 6001-6005.
WANG Yanwei, LU Wei'er, YAN Meiju, XIA Yang. Preparation Process of the Single Crystal Graphene with Different Sizes by Chemical Vapor Deposition. Materials Reports, 2020, 34(6): 6001-6005.
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2020, Vol. 34 
