热力学计算指导下改进CVD法制备大面积薄层MoS2

doi:10.11896/cldb.18110101

材料导报

2019, Vol. 33

Issue (22): 3708-3711 https://doi.org/10.11896/cldb.18110101

无机非金属及其复合材料

热力学计算指导下改进CVD法制备大面积薄层MoS₂

龚跃球,石晓宇,李京兵,谢淑红

湘潭大学材料科学与工程学院,湘潭 411105

Preparing Large Area MoS₂ Thin Layers by Improved Chemical Vapor Deposition Under Instruction of Thermodynamic Calculations

GONG Yueqiu, SHI Xiaoyu, LI Jingbing, XIE Shuhong

School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105

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摘要为了探索改进化学气相沉积法(CVD)制备薄层MoS₂的最佳制备温度,计算了不同温度下该反应体系吉布斯自由能的变化。在热力学计算的指导下,采用多温区管式炉制备MoS₂纳米片,对反应温度和沉积温度进行了精准的掌控,并研究了几个重要参考温度对MoS₂的影响。结果表明,改进型CVD法制备的薄层MoS₂纳米片结晶质量高、厚度均匀;温度对MoS₂的形貌、尺寸和结晶质量的影响显著,MoS₂的尺寸随温度的升高而增大,当温度达到850 ℃时,MoS₂纳米片转化为多边形;同时,确定了制备MoS₂的最佳温度为800 ℃。拉曼光谱、荧光光谱、扫描电镜和原子力显微镜测试结果均表明,在800 ℃下,可以制备出结晶质量高、厚度均匀、尺寸高达几百微米的大面积薄层MoS₂。

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关键词: 热力学计算改进的化学气相沉积二硫化钼拉曼光谱荧光光谱大面积薄层

Abstract: For the sake of determining the optimal temperature for preparing MoS₂thin layers by improved chemical vapor deposition (CVD), we calculated and analyzed the Gibbs free energy of the reaction system at various temperatures. Under the instruction of thermodynamic calculations, we prepared the MoS₂ nanosheets in a multi-temperature zone tube furnace, with the precise control of reaction temperature and deposition temperature, and explored the impact of several important reference temperatures on the growth of MoS₂. It could be found from the results that the MoS₂ thin layers prepared by improved CVD were endowed with high quality and uniform thickness, and temperature exerted phenomenal impact on the morphology, size and crystalline quality of these MoS₂samples. Especially, the increase of temperature gave rise to the enlargement of the MoS₂ area, yet MoS₂nanosheets grew into polygons when the temperature reached 850 ℃. Accordingly, 800 ℃ was determined as the optimal preparation temperature. Meanwhile, Raman spectrum, fluorescence spectrum, scanning electron microscopy and atomic force microscopy were employed to confirm the quality and sizes of MoS₂, and analytic results proved that several hundred square micron large area MoS₂ thin films with high crystalline quality and uniform thickness could be obtained at preparation temperature of 800 ℃.

Key words: thermodynamic calculation enhanced chemical vapor deposition MoS₂ Raman spectroscopy photoluminescence spectra large area thin layers

出版日期: 2019-11-25 发布日期: 2019-09-16

ZTFLH:

TQ136.12

基金资助: 国家自然科学基金(11772286)

作者简介: 龚跃球,副教授,2006年毕业于武汉理工大学,获博士学位。2006年6月到湘潭大学工作至今。主要从事铁电薄膜、二维过渡金属硫化物及其器件的制备。

引用本文:

龚跃球, 石晓宇, 李京兵, 谢淑红. 热力学计算指导下改进CVD法制备大面积薄层MoS₂[J]. 材料导报, 2019, 33(22): 3708-3711.
GONG Yueqiu, SHI Xiaoyu, LI Jingbing, XIE Shuhong. Preparing Large Area MoS₂ Thin Layers by Improved Chemical Vapor Deposition Under Instruction of Thermodynamic Calculations. Materials Reports, 2019, 33(22): 3708-3711.

链接本文:

http://www.mater-rep.com/CN/10.11896/cldb.18110101 或 http://www.mater-rep.com/CN/Y2019/V33/I22/3708

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