Research Progress of Large-area and High-quality Graphene Prepared by Chemical Vapor Deposition
SHI Xiaodong, WANG Wei, YIN Qiang, LI Chunjing
Tianjin Key Laboratory of Electronic Materials and Device, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401;
Abstract: Graphene, as a new kind of carbonaceous materials, is formed by the close accumulation of a single layer of carbon atoms. It has many unique properties such as electricity, photology, thermology and mechanics. Among all the methods for preparation of graphene, chemical vapor deposition (CVD) is the most likely to achieve controllable preparation of a large-area and high-qua-lity graphene. In this paper, we mainly overview the influence factors of large-area and high-quality graphene prepared by CVD, including substrate, carbon source and growth conditions (gas flow rate, growth temperature, plasma power, growth pressure, deposition time, cooling rate, etc). Finally, the development direction of the preparation of graphene by CVD method is proposed.
石晓东, 王伟, 尹强, 李春静. 化学气相沉积制备大面积高质量石墨烯的研究进展*[J]. 《材料导报》期刊社, 2017, 31(3): 136-142.
SHI Xiaodong, WANG Wei, YIN Qiang, LI Chunjing. Research Progress of Large-area and High-quality Graphene Prepared by Chemical Vapor Deposition. Materials Reports, 2017, 31(3): 136-142.
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2017, Vol. 31 
