电子束热处理快速制备石墨烯技术

doi:10.11896/cldb.19030126

材料导报

2020, Vol. 34

Issue (6): 6006-6009 https://doi.org/10.11896/cldb.19030126

无机非金属及其复合材料

电子束热处理快速制备石墨烯技术

许壮¹, 高召顺^1,2, 韩立¹, 左婷婷¹, 伍岳¹, 肖立业¹, 孔祥东¹

1 中国科学院电工研究所,北京 100190;
2 中国科学院洁净能源创新研究院,大连 116000

Preparation of Graphene by Rapid Electron Beam Annealing Method

XU Zhuang¹, GAO Zhaoshun^1,2, HAN Li¹, ZUO Tingting¹, WU Yue¹, XIAO Liye¹, KONG Xiangdong¹

1 Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;
2 Dalian National Laboratory for Clean Energy, Dalian 116000, China

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摘要基于碳原子在金属材料中的偏析机理,采用热处理掺碳镍膜的方式制备石墨烯要求升降温速率越快越好。电子束加热的特点是升降温速率极快,短时间内即可将样品加热至所需实验温度,因此本研究提出采用电子束快速热处理的方式制备石墨烯。将掺杂一定碳原子浓度的金属镍膜置于电子束热处理设备中,并在一定温度下对其进行加热。当碳原子浓度为1%时,电子束热处理制备石墨烯的温度区间为1000~1100℃,仅需要5s热处理时间,即可得到结晶性好、缺陷少的高质量石墨烯。本研究还揭示了电子束作用下碳原子在镍膜中的偏析机理,极大的升降温速率使Ni-C体系在Ni-多层石墨烯和Ni-石墨相区间停留时间极短,镍膜表面多余的碳原子极少,从而形成高质量的单层石墨烯。电子束热处理制备石墨烯的方法效率高、安全性好,提高了石墨烯的应用优势。

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关键词: 石墨烯电子束快速热处理碳偏析多晶镍膜

Abstract: Based on the segregation mechanism of carbon atoms in metal materials, the preparation of graphene by heat treatment of carbon-doped nickel film required a very fast heating and cooling rate. The characteristic of electron beam annealing was that the heating rate was very fast, and the sample could be heated to the required temperature in a short time. Therefore, an electron beam annealing method was proposed to prepare graphene. The nickel film doped with a certain concentration of carbon atoms was heated in the electron beam heat treatment equipment at a certain temperature. When the concentration of carbon atom was 1%, the temperature range of preparing graphene by electron beam annealing method was determined to be 1 000—1 100 ℃, and only 5 s was needed to obtain high-quality graphene with good crystallinity and few defects. The segregation mechanism of carbon atoms in nickel film under the irradiation of electron beam was revealed. The high heating and cooling rate made the residence duration of Ni-C system in Ni-multilayer graphene and Ni-graphite phase interval very short, and the excess carbon atoms on the surface of nickel film were very few, thus forming high-quality single-layer graphene. The method of preparing graphene by electron beam annealing method had the advantages of high efficiency and safety, and improved the application advantages of graphene.

Key words: graphene electron beam rapid annealing carbon segregation polycrystalline Ni film

发布日期: 2020-03-12

ZTFLH:

O647

基金资助: 中国科学院百人计划项目

作者简介: 许壮,2017年6月毕业于兰州大学。2017年至今在中国科学院电工研究所博士后流动站工作,主要研究方向为电子束在材料领域的应用;高召顺,中国科学院电工研究所研究员。2009年毕业于中科院电工研究所并获得工学博士学位。2018年入选中国科学院 “百人计划”。长期从事新型电工材料研究工作,目前主要致力于通过纳米碳掺杂和纳米技术提高常规铜、铝导线导电性能的研究。

引用本文:

许壮, 高召顺, 韩立, 左婷婷, 伍岳, 肖立业, 孔祥东. 电子束热处理快速制备石墨烯技术[J]. 材料导报, 2020, 34(6): 6006-6009.
XU Zhuang, GAO Zhaoshun, HAN Li, ZUO Tingting, WU Yue, XIAO Liye, KONG Xiangdong. Preparation of Graphene by Rapid Electron Beam Annealing Method. Materials Reports, 2020, 34(6): 6006-6009.

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http://www.mater-rep.com/CN/10.11896/cldb.19030126 或 http://www.mater-rep.com/CN/Y2020/V34/I6/6006

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