The Growth and Morphology Characterization of GaN Micro pyramid Structure
ZHAO Chen1,2, JIA Wei1,2, FAN Teng1,2, TONG Guangyun1,2, LI Tianbao1,2,ZHAI Guangmei1,2, MA Shufang1,2, XU Bingshe1,2
1 Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024; 2 Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024
Abstract: The GaN micro-pyramid was grown on unintentional doped GaN epitaxial layers with in-situ pre-deposited SiNx mask via metal organic chemical vapor deposition (MOCVD).The effects of growth temperature, growth time, reaction pressure and Ⅴ/Ⅲ ratio on morphology of the GaN micro-pyramids were studied systematically. The results showed that the GaN micro-pyramid structures were formed at 1 075 ℃. As the growth time was prolonged from 3 min to 20 min, the basal diameter of the GaN micro-pyramids increased from 3.6 μm to 19.8 μm, while the density decreased from 3.8×103 cm-2 to 0.8×103 cm-2. The final complete pyramid-like or truncated pyramid-like GaN micro-structures was mainly determined by reaction pressure and Ⅴ/Ⅲ ratio. These results pave the way for the controllable in-situ growth of GaN micro/nano structures and may facilitate the further development of three-dimensional GaN-based LED devices.
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2017, Vol. 31 
