CVD Synthesis and Growth Mechanism Study of Monolayer Tungsten Diselenide Films
HU Dongdong1,2, SONG Shupeng1,2,*, LIU Junnan2, BI Jiangyuan2, DING Xing2
1 State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081,China 2 College of Material and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081,China
Abstract: Tungsten diselenide(WSe2)is a semiconductor material with wide band gap, and its structure is similar to that of graphene. It has potential applications in many fields such as complementary logic circuits, field effect transistors and gas sensors, due to the excellent photoelectric characteristics. In this work, large-area and high-quality monolayer WSe2 films were prepared by chemical vapor deposition(CVD). The films were characterized by XPS, AFM and Raman. The effects of the distance from substrate to tungsten source and growth temperature on the morphology, size and nucleation density of the samples were investigated. The growth mechanism of WSe2 films with different morphologies was interpreted by different n(W) ∶n(Se)(≫0.5, >0.5, =0.5)from the perspective of crystal growth, which provided a reference for the optimization of the fabrication process of two-dimensional semiconductor monolayer films.
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