石墨烯/硅肖特基结太阳能电池的研究进展

doi:10.11896/cldb.19120150

材料导报

2021, Vol. 35

Issue (9): 9115-9122 https://doi.org/10.11896/cldb.19120150

无机非金属及其复合材料

石墨烯/硅肖特基结太阳能电池的研究进展

刘家森¹, 陈秀华^1,*, 李绍元², 马文会², 李毅¹, 胡焕然¹, 马壮¹

1 云南大学材料科学与工程学院,昆明 650091
2 昆明理工大学冶金与能源工程学院,真空冶金国家工程实验室,昆明 650093

Research Progress of Graphene/Silicon Schottky Junction Solar Cells

LIU Jiasen¹, CHEN Xiuhua^1,*, LI Shaoyuan², MA Wenhui², LI Yi¹, HU Huanran¹, MA Zhuang¹

1 College of Materials Science and Engineering, Yunnan University, Kunming 650091, China
2 National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China

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摘要太阳能电池利用光伏效应直接将光能转变成电能,能有效地解决未来能源危机和环境污染,符合可持续发展的理念。传统的硅基太阳能电池存在需要高温过程,工艺复杂,发电成本无法与火电和水电相抗衡等问题。针对上述问题,近年来研究人员开发了诸多新型太阳能电池以降低制造成本,其中采用石墨烯作为透明电极的石墨烯/硅肖特基结太阳能电池被认为是新一代低成本、高效率的太阳能电池。
然而,石墨烯功函数较低、方阻较高,载流子沿界面复合严重,并且平面硅反射率较高,导致石墨烯/硅肖特基结太阳能电池的效率远低于传统硅基太阳能电池。因此,近年来,主要研究重点在石墨烯掺杂改性、抑制界面处的载流子复合和降低器件的反射率等方面。目前,石墨烯/硅肖特基结太阳能电池的光电转换效率(PCE)已由1.65%提升到16.61%。
目前,成功应用于提升器件性能的石墨烯掺杂剂主要有HNO₃、金属纳米粒子和双(三氟甲磺酰基)酰胺(TFSA)等。其中,HNO₃应用最为广泛,但其稳定性较差,采用金属纳米粒子等物理掺杂可以同时提升器件的PCE和稳定性。在石墨烯和硅之间引入Al₂O₃、MoS₂、量子点等界面层和表面钝化,可以有效地减少硅表面的悬空键,抑制载流子复合,从而提高器件的性能。此外,研究人员通过在石墨烯表面引入TiO₂、PMMA、MgF₂/ZnS等减反射膜,或在硅表面引入纳米线、多孔硅等微结构,来降低器件的反射率,提高其对光的利用率。
本文总结了近年来石墨烯/硅太阳能电池的研究进展,简要介绍了器件的结构和原理,重点介绍了石墨烯掺杂、石墨烯层数选择、硅的纳米或微米结构、减反射膜和界面优化等手段,分析了目前石墨烯/硅肖特基结太阳能电池商业化所面临的问题并对其提出展望,以期为制备效率高和稳定性强的新型石墨烯/硅肖特基结太阳能电池提供一定参考。

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关键词: 石墨烯硅肖特基结太阳能电池界面层

Abstract: Solar cells directly convert light energy into electricity by photovoltaic effect, which can effectively solve future energy crisis and environmental pollution, and conform to the concept of sustainable development. Traditional silicon-based solar cells need high-temperature process, which is complex, and the cost of power generation can not compete with thermal power and hydropower. In order to solve these problems, researchers have developed many novel solar cells in recent years to reduce the manufacturing cost. Among them, graphene/silicon Schottky junction solar cells with graphene as transparent electrode are considered as a new generation of low-cost and high-efficiency solar cells.
However, the efficiency of graphene/silicon Schottky junction solar cells are much lower than that of traditional silicon-based solar cells due to its low work function, high sheet resistance, serious recombination of charge carriers along the interface, and high plane silicon reflectivity. Therefore, in recent years, the main research focuses on the graphene doping modification, suppressing carrier recombination at the interface and the reduction of reflectivity of devices. At present, the photoelectric conversion efficiency (PCE) of graphene/silicon Schottky junction solar cells has increased from 1.65% to 16.61%.
At present, the successful application of graphene dopants to improve the performance of devices mainly includes HNO₃, metal nanoparticles, bis(trifluoromethanesulfonyl)-amide(TFSA) and so on. Among them, HNO₃ is the most widely used, but its stability is poor. Physical doping such as metal nanoparticles can simultaneously improve the PCE and stability of the device. The introduction of Al₂O₃, MoS₂, quantum dots and other interface layers and surface passivation between graphene and silicon can effectively reduce the suspended bonds on the silicon surface and inhibit carrier recombination, so as to improve the performance of devices. In addition, by introducing antireflective films such as TiO₂, PMMA, MgF₂/ZnS on the surface of graphene, or introducing microstructures such as nanowires and porous silicon on the surface of silicon, the researchers can reduce the reflectivity of the device and improve the utilization of light.
In this paper, the research progress of graphene/silicon solar cells in recent years is summarized, and the structure and principle of the device are briefly introduced, with emphasis on graphene doping, graphene layer selection, nano or micro structure of silicon, antireflection film and interface optimization. The problems and prospects of commercialization of graphene/silicon Schottky junction solar cells are analyzed, in order to provide some reference for the preparation of novel graphene/silicon Schottky junction solar cells with high efficiency and strong stability.

Key words: graphene silicon Schottky junction solar cells interface layer

出版日期: 2021-05-10 发布日期: 2021-05-31

ZTFLH:

TM914.4

基金资助: 国家自然科学基金(61764009;51762043;51974143);国家重点研发计划(2018YFC1901801;2018YFC1901805);云南省重大科技专项(2019ZE007);云南省自然科学基金重点项目(2018FA027)

通讯作者: chenxh@ynu.edu.cn

作者简介: 刘家森,2018年6月毕业于重庆交通大学材料科学与工程专业,获得工学学士学位。现为云南大学硕士研究生,在陈秀华教授的指导下进行研究。目前主要研究领域为石墨烯硅基太阳能电池。
陈秀华,云南大学材料科学与工程学院教授,博士研究生导师,2001年博士毕业于昆明理工大学资源开发系矿物加工工程专业,2002—2004年在日本东京大学材料工学从事集成电路布线互连层材料博士后研究工作。目前主要从事新能源环境材料、太阳能级硅电池材料等方面的研究开发工作。

引用本文:

刘家森, 陈秀华, 李绍元, 马文会, 李毅, 胡焕然, 马壮. 石墨烯/硅肖特基结太阳能电池的研究进展[J]. 材料导报, 2021, 35(9): 9115-9122.
LIU Jiasen, CHEN Xiuhua, LI Shaoyuan, MA Wenhui, LI Yi, HU Huanran, MA Zhuang. Research Progress of Graphene/Silicon Schottky Junction Solar Cells. Materials Reports, 2021, 35(9): 9115-9122.

链接本文:

http://www.mater-rep.com/CN/10.11896/cldb.19120150 或 http://www.mater-rep.com/CN/Y2021/V35/I9/9115

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