Abstract: In this paper, we report a very facile and easy method to achieve electronic doping monolayer WSe2 efficiently. A mass fraction of 40% (NH4)2SO4 solution at a relatively low temperature can realize the n-type doping of WSe2, while, the 98% H2SO4 gives rise to the p-type doping of WSe2. It is found that the monolayer WSe2 can keep its crystal structure stable up to as high as 140 ℃ in (NH4)2SO4 solution to approach the maximum doping effect. Both n-type and p-type doping of monolayer WSe2 are reversible by putting the samples in vacuum and followed by cleaning in ultrapure water. And the samples p-doping effects can be significantly enhanced by two-step reaction, which is n-doping in (NH4)2SO4 solution firstly and then followed by p-doping in H2SO4. Therefore, modulate the electronic doping of monolayer WSe2 effectively not only demonstrates a simple way to tune its photoluminescence properties, but also of great importance to guide the design of WSe2-based flexible electronic device.
狄淑贤, 赖泳爵, 邱武, 林乃波, 詹达. 基于简单液相法对单层二硒化钨表面电荷掺杂的研究[J]. 材料导报, 2020, 34(12): 12025-12029.
DI Shuxian, LAI Yongjue, QIU Wu, LIN Naibo, ZHAN Da. Investigation of Surface Charge Doping for Monolayer WSe2 Based on Simple Liquid-phase Treatment. Materials Reports, 2020, 34(12): 12025-12029.
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2020, Vol. 34 
