Effect of Radio Frequency Power and Working Pressure on Characteristics of Ga and Al Co-doped ZnO Thin Films
LUO Guoping1, ZHANG Manhong1, LIANG Quanbin2, CHEN Dong1, CHEN Xingyuan1, LI Tianle1, ZHU Weiling1
1 School of Science, Guangdong University of Petrochemical Technology, Maoming 525000, China 2 State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Abstract: Gallium and aluminum co-doped zinc oxide (GAZO) thin films with high transparency and conductivity were successfully deposited on glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The effects of RF power and working pressure on the structural, optical and electrical characteristics of GAZO thin films were investigated by X-ray diffraction (XRD), UV-Vis-NIR spectrophotometer, four-point-probe setup and ultraviolet photoelectron spectroscopy (UPS). The results show that all GAZO thin films have a hexagonal wurtzite crystal structure with a preferential orientation along (002) direction normal to the substrate, and their average visible transmittance (400—700 nm) are above 90%. The thin films deposited with 200 W and 0.20 Pa yield the lowest resistivity of 1.40×10-3 Ω·cm and highest figure of merit (FOM) of 8.10×10-3 Ω-1. The optical and electrical characteristics of the deposited GAZO thin films indicate that they have potential applications in optoelectronic devices as transparent electrode.
罗国平, 张漫虹, 梁铨斌, 陈冬, 陈星源, 李天乐, 朱伟玲. 射频功率和工作压强对Ga、Al共掺杂ZnO薄膜性能的影响[J]. 材料导报, 2020, 34(12): 12020-12024.
LUO Guoping, ZHANG Manhong, LIANG Quanbin, CHEN Dong, CHEN Xingyuan, LI Tianle, ZHU Weiling. Effect of Radio Frequency Power and Working Pressure on Characteristics of Ga and Al Co-doped ZnO Thin Films. Materials Reports, 2020, 34(12): 12020-12024.
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2020, Vol. 34 
