Preparation and Study of Si3N4/W High Temperature Co-fired Ceramics
DAI Jinrong1,2, TANG Zhihong1,*, DUAN Yusen2, ZHANG Jingxian2,*
1 School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China 2 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Abstract: Silicon nitride (Si3N4) ceramics, with good thermal conductivity and excellent mechanical properties, have great development prospect in high-power electronic devices. The realization of high temperature co-firing of Si3N4 ceramics and metal is of great significance for the application of Si3N4 ceramics in electronic devices. The substrate materials commonly used in high temperature co-firing technology are alumina, zirconia and aluminum nitride ceramics. In view of this, this work used Si3N4 ceramics as substrate materials, combining tape casting, screen prin-ting and high temperature co-firing technology to prepare Si3N4 multilayer co-firing components, and explored the influence of the sintering additive (Er2O3) content on the properties of Si3N4 ceramics. The debonding process, interface structure and composition, and conductivity of Si3N4 multilayer components were analyzed and discussed. The results showed that at the Er2O3 content of 9%, and the relative density, shrinkage, thermal conductivity and bending strength of Si3N4 ceramics were 95.35%, 10.33%, 69.94 W/(m·K) and (807.33±10.34) MPa, respectively. The debonding process for Si3N4 multilayer components was determined:increasing the temperature up to 600 ℃ with 1 h holding in vacuum at the heating rate of 1 ℃/min. The thickness of the W layer in the obtained Si3N4 multilayer component was about 7 μm, and the boundary between the W layer and the Si3N4 ceramic layer was obvious. There was a mechanical interlocking structure developed with the presence of W5Si3 at the interface due to the reaction between Si3N4 and W. The sheet resistance of the module was 0.878 Ω/sq, which proved that the component showed electrical conductivity. This work provided a new substrate material for high temperature co-firing technology, and also developed the technology of the high temperature co-firing of Si3N4 ceramics with metal, helping to expand the application of Si3N4 ceramics in electronics industry.
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2023, Vol. 37 
