Abstract: Graphene has broad prospects in the fields of energy, sensing, biomedicine and flexible wearable devices due to its unique 2D sp2-hybridized networks of carbon atoms and excellent mechanical, optical and electrical properties. In order to use graphene in various applications of electronic and optoelectronic devices, it is essential to precisely modulate its electronic properties through doping. Compared with traditional chemical doping methods and the surface physical control strategy based on external field, photo-induced doping is an emerging research focus area due to better flexibility, easier manipulation and slighter influence on the carrier mobility of graphene. In the current research, photo-induced doping is mainly realized through the adsorbed molecules, substrate charges and photoactive substances, which have been applied to the preparation of in-situ p-n junctions and the performance optimization of optoelectronic devices (such as solar cells and photodetectors). Herein, we review the mechanisms and research status of photo-induced doping and then look forward to its future development prospects. Compared with other methods, photo-induced graphene doping based on photoactive substances has broader application prospects due to the rapid speed, high concentration, preferable stability and controllability in doping.
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