Influence of Structure on the Electrical Properties of Perovskite Piezoelectric Films: a Review
MI Qingbo1,2, XING Zhiguo2, WANG Haidou1,2, JIN Guo1, GUO Weiling2, HUANG Yanfei2, TANG Shi3
1 Institute of Surface/Interface Science and Technology, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150006, China 2 National Key Laboratory for Remanufacturing, Armored Forces Engineering Institute, Beijing 100072, China 3 CNPC Research Institute of Safety & Environment Technology Co.,Ltd, Beijing 102206, China
Abstract: Perovskite piezoelectric ceramic has become one of the important materials for commercial sensors and semiconductor devices due to their high piezoelectric coefficient and good electromechanical coupling performance. Perovskite piezoelectric film is small in size, which is beneficial to the integration of complex circuit structure and has irreplaceable advantages in the manufacture of precision electronic components. However, the decrease of macro size, the lattice mismatch between the interfaces and pore defects in the formation process limit the movement of domain walls, resulting in the low ferroelectric, piezoelectric and dielectric properties of the films. In recent years, researchers have been constantly adjusting the selection of substrates, exploring ways to improve the formation process of piezoelectric thin film, in order to optimize the electrical properties of piezoelectric thin film limited by structural characteristics. The results show that (100), (110) and (111) are the grain orientations which can effectively improve the electrical properties of the films. At the same time, the columnar grain shape and large grain size can further ensure the piezoelectric films obtain good electrical properties. The shape and size of the grains depend on the thickness of the film to a great extent, so the increase of thin film thickness is beneficial to improving the electrical properties. In addition, the grain size is similar to the film thickness, both of which have a critical value. Below this value, the electrical response nearly disappears. The mismatch dislocation caused by the mismatch strain at the interface limits the movement of the domain, and the low dielectric constant layer reduces the electrostatic storage capacity of the film, which is an important factor leading to the decline of the electrical properties of the film. The pinning effect of holes increases the energy barrier for nucleation and growth of new domains, and inhibits the transition of piezoelectric thin films from tetragonal phase to rhombic phase. Therefore, although porosity decreases the piezoelectric coefficient (d33), the thermal stability of the films can be improved. In addition, it has been found that there is a positive correlation between the mechanical coupling properties and membrane porosity. In this paper, the structure of piezoelectric ceramic film and the influence of stress caused by its structural characteristics on its performance are discussed. The effects of crystal structure, geometric structure and defects on the electrical properties of materials are described, and the mechanism of the influence of film microstructure on domain wall movement is analyzed. With the rapid development of intelligent manufacturing industry, piezoelectric ceramic film will inevitably develop in the direction of smaller size, more complex structural design, wider application range, more comprehensive functions and higher integration.
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2021, Vol. 35 
