液态前驱体化学气相沉积法生长单层二硒化钨

doi:10.11896/cldb.23120071

材料导报

2024, Vol. 38

Issue (24): 23120071-6 https://doi.org/10.11896/cldb.23120071

无机非金属及其复合材料

液态前驱体化学气相沉积法生长单层二硒化钨

安博星^1,2,*, 王雅洁^1,2, 肖永厚^1,2,*, 楚飞鸿³

1 大连理工大学盘锦产业技术研究院,辽宁盘锦 124221
2 沈阳化工大学化学工程学院,沈阳 110142
3 河北科技工程职业技术大学,河北邢台 054000

Growth of Monolayer Tungsten Diselenide via Liquid Precursor Chemical Vapor Deposition

AN Boxing^1,2,*, WANG Yajie^1,2, XIAO Yonghou^1,2,*, CHU Feihong³

1 Panjin Institute of Industrial Technology, Dalian University of Technology, Panjin 124221, Liaoning, China
2 School of Chemical Engineering, Shenyang University of Chemical Technology, Shenyang 110142, China
3 Hebei Vocational University of Technology and Engineering, Xingtai 054000, Hebei, China

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摘要化学气相沉积(CVD)是实现二维(2D)过渡金属硫族化合物(TMDs)制备的简单有效方法。晶核位置的随机分布和生长可控性差是当前实现大面积高质量制备TMDs的一项巨大挑战。本工作以单层二硒化钨的生长为例,采用液态前驱体并调控其浓度使微量金属前驱体高度均匀地分散在生长衬底表面,可有效诱导低过饱和度,从而降低成核密度,最终得到组分分布均匀、高质量的单层二硒化钨。这种液态前驱体化学气相沉积技术可以推广到其他2D材料的生长,为大面积、均匀的高质量2D材料的生长提供了一种更有效的方式。

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	安博星
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关键词: 液态前驱体化学气相沉积可控生长二硒化钨

Abstract: Chemical vapor deposition (CVD) is a straightforward and efficient technology used for preparing two-dimensional (2D) transition metal chalcogenides (TMDs). However, the random distribution of nucleus position andpoor growth controllability are currently a great challenge to achieve large scale, high quality TMDs preparation. In this study, taked the growth of monolayer tungsten diselenide (WSe₂) as an example. Utilized a liquid phase precursor and adjusted its concentration to prompt the trace metal precursor evenly disperse on the surface of the growth substrate. This approach should reduce nucleation density effectively, and induced low saturation. it’s helpful to successfully formate a monolayer WSe₂ with uniform component distribution and high quality. This liquid precursor CVD technique introduced here can be extended to the growth of other 2D materials, and offer a more practical approach for achieving large area, uniform, and high-quality 2D materials.

Key words: liquid precursor chemical vapor deposition (CVD) controllable growth tungsten diselenide (WSe₂)

出版日期: 2024-12-25 发布日期: 2024-12-20

ZTFLH:

O469

基金资助: 国家自然科学基金(21776028);河北省自然科学基金(A2023108002)

通讯作者: * 安博星,工学博士,大连理工大学盘锦产业技术研究院工程师,沈阳工业大学、沈阳化工大学校外硕士研究生指导教师。主要研究领域为化工新材料的制备和水环境的高效修复。主持辽宁省化学助剂合成与分离重点实验室开放课题1项。以主要参与人身份参与国家自然科学基金、北京市自然科学基金、北京市教委项目等多项科研项目。已发表SCI论文和核心期刊论文30余篇,申请中国发明专利8项,受邀参与编写专著1本。 anboxing@dlut.edu.cn;肖永厚,工学博士,大连理工大学盘锦产业技术研究院教授级高工。国务院政府特殊津贴专家,中国化工学会过程强化专业委员会首届青年委员。长期致力于多孔吸附材料、低碳烯烃转化等工业催化剂研制,曾开发烯烃异构化催化剂、多种脱硫、脱氮、含氧化合物高效吸附剂并成功放大。主持国家自然科学基金面上项目、中央引导地方项目、中石化总部重点项目、辽宁省重点研发计划等课题;完成多项企业合作项目。参与完成国家863、973、“中石化十条龙科技攻关”等项目。在国内外重要期刊发表学术论文50余篇,申请国际、中国发明专利50余项,获授权近40项。 yonghou.xiao@dlut.edu.cn

引用本文:

安博星, 王雅洁, 肖永厚, 楚飞鸿. 液态前驱体化学气相沉积法生长单层二硒化钨[J]. 材料导报, 2024, 38(24): 23120071-6.
AN Boxing, WANG Yajie, XIAO Yonghou, CHU Feihong. Growth of Monolayer Tungsten Diselenide via Liquid Precursor Chemical Vapor Deposition. Materials Reports, 2024, 38(24): 23120071-6.

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http://www.mater-rep.com/CN/10.11896/cldb.23120071 或 http://www.mater-rep.com/CN/Y2024/V38/I24/23120071

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