Abstract: Copper indium gallium selenium (CIGS) solar cells have the advantages of high conversion efficiency, low production cost, no decay and little pollution. It is a promising new type of thin film solar cells. Its photoelectric conversion efficiency has reached 23.35% in the laboratory. It is of great significance to explore the photoelectric conversion mechanism and device performance improvement methods of CIGS to promote the development of photovoltaic industry. This paper comprehensively analyzes the development process, principle, structure and main technical ways to improve the performance of CIGS. (1) The development of post deposition technologies for various alkali metals, such as NaF-PDT, KF-PDT, RbF-PDT and Cs-PDT is mainly introduced; (2) the application of Zn (O, S), ZnS, (Zn, Mg)O in order to optimize the structure of the buffer layer, Cd free buffer layer materials were used to replace CdS buffer layer; (3) double or three layer Mo back electrode was used to solve the problem of Mo surface defects; (4) doping other elements (such as aluminum, chlorine or boron instead of zinc cation doping) to improve the conductivity of ZnO, and then optimize the window layer. Then, the photoelectric conversion mechanism and influencing factors of CIGS solar cells are analyzed, and the process route method based on theory optimization is proposed. Finally, the development trend of CIGS thin film solar cell technology is discussed.
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