The State Key Laboratory of Refractories and Metallurgy, Faculty of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China
Abstract: The controllable preparation of large area molybdenum disulfide (MoS2) thin film is the key to its application, especially the MoS2 with few layers and p-type conductivity, which is of great significance for the device application, but few literatures have been reported. In this paper, inch sized few-layer MoS2 thin films were prepared successfully and controllably on glass substrate through room-temperature radio frequency (RF) magnetron sputtering deposition combined with sulfuration annealing at low temperature. The results of atomic force microscopy (AFM), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and ultraviolet visible absorption spectroscopy (UV-vis) show that the large area ultra-thin MoS2 film is composed of polycrystalline three-layer, of which the thickness is of about 2.2 nm. The film is uniform, flat, controllable and with good crystallinity and high stability. The few-layer MoS2 film were prepared on the Si/SiO2 substrate by the same process, a back-gate field effect transistor (TFT) with P-type conductivity and carrier mobility of 0.183 cm2·V-1·s-1 is achieved. The proposed synthesis progress with a characteristic of simpleness and low-temperature is suitable for industrial large-scale production, and paves a selectable way for facile and efficient preparing few- and mono-layer MoS2 film with large-area.
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2021, Vol. 35 
