1 Yunnan Key Laboratory for Opti-electronic Information Technology,Yunnan Normal University, Kunming 650092, China; 2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, CAS, Beijing 100083, China
Abstract: PIN-type long-wave infrared (LWIR) 28 ML InAs/7 ML InAs0.48Sb0.52 superlattice detector materials were grown on GaSb substrates by mole-cular beam epitaxy (MBE). The influence Sb-soaked interface on the surface morphology, microstructure and photoelectric properties were studied. The results showed that, compared with superlattices without interface control, the surface of superlattices with Sb-soaked interface was smoother with the roughness 1.28 . The crystal structure was more complete with the FWHM and interface fluctuations reducing significantly. The mismatch between superlattices and substrates was reduced from 3.26% to 2.97%. The 50% cut-off wavelength of InAs/InAsSb superlattice detector was 10 μm with the quantum efficiency 3.1%. The superlattice with Sb-soaked interface had lower dark current and higher differential impedance. The dark current density was 0.12 A/cm2 and R0A was 0.44 Ω·cm2 at -50 mV bias. The detectivity was calculated to 5.06×107 cm·Hz1/2/W. This indicated that Sb-soaked interface effectively inhibited the diffusion of Sb and improved the crystal quality and detection perfor-mance. But the mismatch stress caused by the interface was still very large. These results provided a basis for the interface growth of high-quality LWIR InAs/InAsSb superlattice detector.
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2020, Vol. 34 
