A Review on the Growth of Ⅲ-Ⅴ One-dimensional Semiconductor NanowiresBased on Vapor-Liquid-Solid Mode
LIU Yan1, PENG Yan1, GUO Jingwei2,3, XU Zhaopeng2, LA Dongsheng4,5
1 National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, Yanshan University, Qinhuangdao 066004 2 School of Information Science and Engineering, Yanshan University, Qinhuangdao 066004 3 Hebei Key Laboratory of Information Transmission and Signal Processing, Yanshan University, Qinhuangdao 066004 4 School of Computer and Communication Engineering, Northeastern University atQinhuangdao, Qinhuangdao 066004 5 State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096
Abstract: Because of their unique properties and abundant scientific connotations, Ⅲ-Ⅴ one-dimensional semiconductor nanowires are widely used in micro-electromechanical, optoelectronic, photovoltaic, sensing and other fields, and play an important strategic role in future nanostructured devices, which have attracted great interest and attention in recent years. Exploring new structural control methods, researching controllable growth methods and technologies of Ⅲ-Ⅴ one-dimensional semiconductor nanowires with important application value, so as to obtain high-quality Ⅲ-Ⅴ one-dimensional semiconductor nanowires which can be applied to devices and functional realization are the main goals of current research groups. The growth method of nanowires based on vapor-liquid-solid (VLS) mode has the advantage of controllability of nanowires’ morphology and crystal quality, and has become the main growth technology for high-quality Ⅲ-Ⅴ one-dimensional semiconductor nanowires. Catalyst assisted VLS growth is a kind of nanowire growth with metal catalysts. It can effectively reduce the energy of reactant pyrolysis, improve the quality of nanowire nucleation, control the direction of nanowire growth, improve the reaction efficiency and ensure the crystal structure of nanowires. Self-catalyzed VLS growth refers to the growth of nanowires catalyzed by the reactants themselves without adding other materials as catalysts. Since self-catalyzed VLS growth does not introduce other materials into the reaction process, the purity of the nanowires is high. Ⅲ-Ⅴ heterostructure semiconductor nanowires often have excellent optoelectronic properties that neither of the two semiconductors can achieve. They can also be divided into axial heterostructures and radial heterostructures. Ⅲ-Ⅴ one-dimensional semiconductor nanowires can grow not only on the same substrate surface as their own materials, but also on different substrate surfaces, i.e., on heterosubstrates. Heterosubstrate growth has broad application prospects in material compatibility and photoelectric integration. In this paper, the growth of Ⅲ-Ⅴ one-dimensional semiconductor nanowires based on vapor-liquid-solid model is reviewed. The recent years’ research progress on the growth of axial heterostructures, radial heterostructures and heterosubstrates based on catalyst assisted and self-catalyzed methods are summarized to provide references for the development of Ⅲ-Ⅴ semiconductor nanowire fabrication technology.
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2019, Vol. 33 
