1 Institute of Advanced Optoelectronic Materials and Technology of College of Big Data and Information Engineering of Guizhou University, Guiyang 550025; 2 Engineering Center for Avionics Electrical and Information Network of Guizhou Provincial Colleges and Universities,Anshun University, Anshun 561000; 3 School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001
Abstract: Semiconducting Mg2Si films were prepared by magnetron sputtering deposition and subsequent annealing on soda-lime glass substrates. The influences of Mg film thickness on the crystal structure and electrical properties of Mg2Si films were investigated. P-Si and N-Si films with same thickness (175 nm) were deposited on different soda-lime glass substrates by magnetron sputtering, and then Mg films with different thicknesses (240 nm, 256 nm, 272 nm, 288 nm and 304 nm) were deposited on Si films. A series of Mg2Si semiconductor films were prepared by low vacuum annealing for 4 h. The crystal structure, surface morphology and electrical properties of the obtained films were characterized and analyzed by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect measurement system. The results show that Mg2Si films with preferential growth of Mg2Si (220) are prepared successfully by magnetron sputtering technique on soda-lime glass substrates, and that the diffraction peak intensity of obtained Mg2Si films increases with the increase of thickness of Mg films on Si films. Meantime both the electrical resistivity and mobi-lity decrease, and carrier concentrations increase. The surfaces of the films become continuous with the increase of thickness of Mg films on Si films. Both the electrical conduction type of deposited Si films and the thickness of deposited Mg films affect the electrical conduction type of the obtained Mg2Si films. When the N-type Si films are deposited firstly on substrates, the electrical conduction type of the obtained Mg2Si films changes from P-type to N-type with the increase of the thickness of deposited Mg films on Si films. When the P-type Si films are deposited firstly on substrates, the electrical conduction type of the obtained Mg2Si films becomes P-type. The electrical conduction type of the obtained Mg2Si films can be controlled conveniently, which is beneficial to the device development of the Mg2Si films.
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2017, Vol. 31 
