Magnetic Anisotropy of CoFeMnSi Multilayer Films with Different Interface Sequences
QIAO Lihong1,2,*, YOU Caiyin1,*, FU Huarui1, TIAN Na1, BAI Yang2, LIU Xiaoyu2
1 School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China 2 Center for New Rare Earth Material Technology Research and Development, Baotou 014020, Inner Mongolia, China
Abstract: Ta/Pd/CoFeMnSi/MgO(tMgO)/Pd multilayer films and Ta/MgO(tMgO)/Pd multilayer films with different interface orders were prepared by magnetron sputterer, in which tMgO was 1.0 nm, 1.2 nm, 1.4 nm, 1.6 nm, 1.8 nm, 2.0 nm, 2.2 nm and 2.4 nm, and annealed for 30 min under vacuum conditions at 300 ℃. The physical mechanism of different magnetic anisotropies caused by different interface orders was explored. The magnetic test results showed that Ta/Pd/CoFeMnSi/MgO(tMgO)/Pd multilayer films demonstrated good perpendicular magnetic anisotropy (PMA) when tMgO was 1.6—2.0 nm, and Ta/MgO(tMgO)/CoFeMnSi/Pd multilayer films showed in-plane magnetic anisotropy (IMA) in the MgO thickness test range. The reasons why the Ta/MgO/CoFeMnSi/Pd structure multilayer films cannot achieve PMA are that the combination of Ta layer to O correspondingly leads to insufficient bonding of Co, Fe with O; a certain amount of oxidation of Si and Mn further reduces the content of Co-O and Fe-O bonding.
乔礼红, 游才印, 付花睿, 田娜, 白洋, 刘小鱼. 不同界面次序CoFeMnSi多层膜的磁各向异性[J]. 材料导报, 2024, 38(18): 23040015-6.
QIAO Lihong, YOU Caiyin, FU Huarui, TIAN Na, BAI Yang, LIU Xiaoyu. Magnetic Anisotropy of CoFeMnSi Multilayer Films with Different Interface Sequences. Materials Reports, 2024, 38(18): 23040015-6.
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2024, Vol. 38 
