Rapid Thermal Diffusion of Phosphorus in Amorphous Silicon Thin Films to Prepare Heterojunction with Intrinsic Thin-layer
YANG Xiuyu1, CHEN Nuofu1, ZHANG Hang1, TAO Quanli1, XU Jiaran1, CHEN Meng1, CHEN Jikun2
1 School of Renewable Energy, North China Electric Power University, Beijing 102206 2 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
Abstract: Heterojunction with intrinsic thin-layer (HIT) solar cells have many advantages, such as high efficiency, low cost, good stability and low temperature of preparing. Using magnetron sputtering method, we prepared the intrinsic amorphous silicon film (i-a-Si) with a certain thickness on the substrate of P-type crystalline silicon (p-c-Si), then the doped amorphous silicon layer (n+-a-Si), which is also the ideal p-n junction, was obtained by the rapid thermal diffusion method (RTD). Finally, the heterostructure of n+-a-Si/i-a-Si/c-Si was prepared successfully. This paper focus on the effect of diffusion process on the crystallization of amorphous silicon film,including i-a-Si and n+-a-Si, and the depth of p-n junction. Meantime, we characterized the amorphous silicon film by Raman spectra and X-ray diffraction (XRD), and the depth of p-n junction was mea-sured by metallographic microscope with the lapping and staining method. As a result, the ideal temperature and time of diffusion to get better p-n junction was concluded.
王同龙.http://www.qianzhan.com/qzdata/detail/149/151201-5ec9b13a.html, 2015-12-01/2018-09-08.2 王安琪.http://guangfu.bjx.com.cn/news/20170410/819122.shtml, 2017-04-10/2018-09-08.3 Yoshikawa K, Kawasaki H, Yoshida W, et al. Nature Energy, 2017, 2(5),17032.4 NREL. https://www.nrel.gov/pv/assets/images/efficiency-chart.png, 2017/2018-09-08.5 Green M A, Hishikawa Y, Warta W, et al. Progress in Photovoltaics, 2017, 25(7), 668.6 Masuko K, Shigematsu M, Hashiguchi T, et al. IEEE Journal of Photovoltaics, 2014, 4(6),1433.7 Taguchi M, Terakawa A, Maruyama E, et al. Progress in Photovoltaics Research & Applications, 2005, 13(6),481.8 Taguchi M, Yano A, Tohoda S, et al. IEEE Journal of Photovoltaics, 2013, 4(1),96.9 Tohoda S, Fujishima D, Yano A, et al. Journal of Non-Crystalline So-lids, 2012, 358(17),2219.10 Adachi D, Hernández J L, Yamamoto K. Applied Physics Letters, 2015, 107(23),73.11 Descoeudres A, Holman Z C, Barraud L, et al. IEEE Journal of Photovoltaics, 2013, 3(1),83.12 Fujishima D, Inoue H, Tsunomura Y, et al. In: Photovoltaic Specialists Conference. IEEE, USA, 2010, pp. 003137.13 Tsunomura Y, Yoshimine Y, Taguchi M, et al. Solar Energy Materials & Solar Cells, 2009, 93(6-7),670.14 Maruyama E, Terakawa A, Taguchi M, et al. In: Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE, World Conference on IEEE, USA, 2007, pp. 1455.15 Taguchi M, Terakawa A, Maruyama E, et al. Progress in Photovoltaics Research & Applications, 2005, 13(6),481.16 Wang Q, Page M R, Iwaniczko E, et al. Applied Physics Letters, 2010, 96(1), 2186.17 Zhang Q F, Zhu M F, Liu F Z. Solar Energy, 2006(4),40 (in Chinese).张群芳,朱美芳,刘丰珍.太阳能, 2006(4),40.18 Zhang Q F, Zhu M F, Liu F Z, et al. Journal of Semiconductors, 2007, 28(1),96 (in Chinese).张群芳, 朱美芳, 刘丰珍,等.半导体学报, 2007, 28(1),96.19 Jagannathan B, Anderson W A, Coleman J. Solar Energy Materials & Solar Cells, 1997, 64(3), 241.20 Liang X Q. Experiments and analysis of new technology of crystalline silicon solar cell. Master’s Thesis, Zhongshan University,China, 2010 (in Chinese).梁学勤. 晶体硅太阳电池新工艺实验研究和理论分析.硕士学位论文,中山大学, 2010.21 Tong L Y, Zhao Q, Shi J X, et al.Semiconductor Technology, 2009, 34(12), 1213 (in Chinese).佟丽英, 赵权, 史继祥,等.半导体技术, 2009, 34(12),1213.22 He B, Shi Y L, Xu J.Infrared, 2006, 27(10),5 (in Chinese).何波, 史衍丽, 徐静.红外, 2006, 27(10),5.23 Lavareda G, Velozo A D C, Carvalho C N D, et al. Thin Solid Films, 2013, 543(24),122.24 Green M. Solar cells: Principles, technologies and applications of systems, Electronics Industry Press, China, 1987 (in Chinese).马丁·格林. 太阳电池:工作原理、工艺和系统的应用, 电子工业出版社, 1987.25 Tanaka M, Okamoto S, Tsuge S, et al. In: Photovoltaic Energy Conversion, 2003. Proceedings of World Conference on IEEE Xplore. Japan, 2003, pp. 955.26 Jia X P. Chinese Journal of Power Sources, 2011, 35(2), 127 (in Chinese).贾旭平.电源技术, 2011, 35(2),127.27 世纪新能源网. http://www.ne21.com/news/show-73714.html, 2016-03-04/2018-09-08.
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2019, Vol. 33 
