Impact of Annealing on Germanium Thin Film Prepared by Aluminum-inducedCrystallization and the Corresponding Mechanism
HE Kai1, CHEN Nuofu1, WEI Lishuai1, WANG Congjie1, CHEN Jikun2
1 School of Renewable Energy, North China Electric Power University, Beijing 102206; 2 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
Abstract: For the sake of fabricating GaInP/GaInAs/Ge triple-junction solar cell on silicon substrate, the present work made an attempt to prepare Ge film on a (100) monocrystalline silicon substrate following the strategy of aluminum-induced crystallization (AIC) by magnetron sputtering and conventional annealing method. The resultant samples were analyzed by metallographic microscopy, XRD and Raman spectroscopy, so as to investigate the effects of annealing time and annealing temperature during the process of AIC on Ge crystallinity. Our experiment confirmed the improved Ge film quality by adopting lower annealing temperatures and longer annealing durations. The minimum annealing temperature for the aluminum-induced Ge film crystallization was determined to be 250 ℃, under which a Ge film with a grain size larger than 100 nm and preferred orientation of Ge (111) facet higher than 99% was successfully obtained.
贺凯, 陈诺夫, 魏立帅, 王从杰, 陈吉堃. 退火对铝诱导结晶锗薄膜的影响及其机理[J]. 材料导报, 2018, 32(15): 2571-2575.
HE Kai, CHEN Nuofu, WEI Lishuai, WANG Congjie, CHEN Jikun. Impact of Annealing on Germanium Thin Film Prepared by Aluminum-inducedCrystallization and the Corresponding Mechanism. Materials Reports, 2018, 32(15): 2571-2575.
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2018, Vol. 32 
