1 Jiangsu Key Laboratory of Advanced Strutural Materials and Application Technology, Nanjing 211167, China 2 School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167, China
Abstract: Graphite-type carbon nitride (g-C3N4) is an electron-rich organic semiconductor with a band gap of 2.7 eV between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO). Thus, it has better photocatalytic performance. Compared with the traditional photocatalyst, g-C3N4 contains no metal elements and has a narrow band gap. Because of its good chemical stability, easy structure regulation and simple preparation, g-C3N4 has become a hot spot in the development of photocatalyst. However, the original g-C3N4 formed by heat-shrinking polymerization of a nitrogen-rich organic precursor still has a large number of structural defects due to incomplete polymerization. In photocatalytic reactions, these structural defects often act as recombination centers for electron-hole pairs, greatly reducing charge separation efficiency and thus reducing photocatalytic activity. In addition, the conductivity of g-C3N4 is weak, which leads to the huge energy consumed by the photogenerated electrons in the bulk phase to migrate to the surface layer, which in turn causes the reduction potential of photogenerated electrons to decrease. Therefore, the catalytic effect of g-C3N4 is also reduced. Moreover, the bulk g-C3N4 has disadvantages such as small specific surface area and poor liquid phase dispersion. In summary, the stability and catalytic activity of g-C3N4 catalysts are poor, which greatly limits the development of related fields. In recent years, the development of high stability, high catalytic activity of g-C3N4 catalyst has become the focus of photocatalyst. In recent years, researchers have adopted methods such as templating, elemental doping, copolymerization, precious metal deposition or semiconductor recombination to enhance their photocatalytic activity, so that g-C3N4 can be applied to fields such as photolysis water hydrogen evolution, organic pollutant degradation, artificial photosynthesis, antibacterial and selective conversion of organic functional groups. However, the above modification methods are mainly based on the electronic properties of g-C3N4 to regulate its matrix. Usually, the catalytic reaction is mainly carried out on the surface of the photocatalyst, so surface modification of g-C3N4 is a more economical and effective method for improving its photocatalytic activity. In this paper, the research progress of surface modification of g-C3N4 is reviewed. This review firstly analyzes the surface functional group state of g-C3N4, and then reviews the research status of g-C3N4 surface modification from three aspects of activation, sensitization and surface functionalization, and finally prospects the direction of development.
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