Abstract: A memristor is a circuit element that can store information or perform calculations by changing its resistance. However, a pulse circuit with a pulse width of up to nanosecond is a difficult task, and limits the speed at which the memristor can change resistance. The pulse width of a pulsed laser is very short and can easily reach the nanosecond level. Cu2Se is a typical thermoelectric material with both hole and Cu+ as carriers under the graded temperature field. The movement of Cu+ is irreversible without graded temperature field. Besides, the energy consumption for establishing thermal or graded temperature field (10 000 ℃=1 eV) is much less than that for electric field, laser, oxidation-reduction reactions, etc. Therefore Cu2Se might be a kind of thermoelectric memristor material. In this work, the memristor electrical properties of Cu2Se samples were measured, and the temperature distribution models of Cu2Se samples at different times in the thickness direction were simulated. The thermoelectric potential and electric field intensity at different positions were calculated according to the thermoelectric property of Cu2Se. As the result, the electric field intensities of Cu2Se samples at different positions along the thickness direction after pulsed laser were obtained. The experimental results show that the direct voltage and inverse voltage of 70 μm thick Cu2Se samples with 1 mm probe spacing are 0.47 V and 0.40 V, respectively, Cu2Se thermoelectric materials do not need an initial high voltage to stimulate the memristor effect. Also, the mechanism of Cu2Se ther-moelectric memristor has been proposed. The calculation results indicate that the electric field intensities (50—0.56 V/mm)along the thickness direction is greater than the electric field intensities required for resistance transformation (0.5 V/mm). Therefore, the feasibility of laser irradiation Cu2Se thermoelectric memristor devices is proved theoretically.
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2023, Vol. 37 
