Abstract: A series of bismuth-ion-doped SrTiO3 thin films were deposited on p+-Si substrates via a sol-gel process and the subsequent rapid annealing technique, to fabricate the sandwich structures of Ag/Sr1-xBixTiO3/p+-Si for resistance-switching device. The effects of Bi-ion doping concentration on microstructure of the thin film, and resistance switching behavior of Ag/Sr1-x-BixTiO3/p+-Si devices were investigated. The results showed that a low amount of Bi causes no change in the phase structure of Sr1-xBixTiO3 thin films, but an obvious increment of grain size can be observed with the increasing Bi doping content. The Bi4SrTi4O15 and TiO2 phases will form when the doping amount is x=0.16. All of the Ag/Sr1-xBixTiO3/p+-Si devices exhibit bipolar resistive and multi-level resistance switching behaviors. The increasing Bi doping concentration also leads to a biphasic (increase→decrease) change in the device’s resistance switching property;when x=0.12 the device shows the maximum high/low resistance ratio of 105 and better reading endurance after 2 000 cycles, but the device performance decays while x=0.16. This can be explained by the change of dominant conduction mechanism under HRS (high resistance state) induced by Bi doping, from space charge limited current (SCLC) (x＜0.16) to Schottky barrier emission (x=0.16). All the devices conduct current in accordance with the filamentary theory under LRS (low resistance state).
1 Zhou J, Cai F, Wang Q, et al. Very low-programming-current RRAM with self-rectifying characteristics[J]. IEEE Electron Device Letters,2016,37(4):404. 2 Meyer H W, Carpenter M A, Becerro A I, et al. Hard-mode infrared spectroscopy of perovskites across the CaTiO3-SrTiO3 solid solution[J]. American Mineralogist,2015,87(10):1291. 3 Pan F, Gao S, Chen C, et al. Recent progress in resistive random access memories: Materials, switching mechanisms, and perfor-mance[J]. Materials Science & Engineering R Reports,2014,83(1):1. 4 Zhao D F, Yong S L,Shen B. Common electronic features and electronic nematicity in parent compounds of iron-based superconductors and FeSe∥SrTiO3 films revealed by angle-resolved photoemission spectroscopy[J]. Chinese Physics Letters,2016,33(7):077402. 5 Ge J F, Liu Z L, Liu C, et al. Superconductivity above 100K in single-layer FeSe films on doped SrTiO3[J]. Nature Materials,2015,14(3):285. 6 Ren S, Zhu G, Xie J, et al. Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb∶SrTiO3/Ag resistive random access memory (RRAM) device at room temperature[J]. Journal of Physics Condensed Matter,2016,28(5):1. 7 Stille S, Lenser C, Dittmann R,et al. Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top[J]. Applied Physics Letters,2012,100(22):223503. 8 Shen J X, Qian H Q, et al. Temperature-dependent resistive switching behavior in the structure of Au/Nb∶SrTiO3/Ti[J]. Applied Physics A Materials Science & Processing,2013,111(1):303. 9 Chen X G, Ma X B, Yang Y B, et al. Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3[J]. Applied Physics Letters,2011,98(12):122102. 10 Song M Y, Seo Y, Kim Y S, et al. Realization of one-diode-type resistive-switching memory with Cr-SrTiO3 film[J]. Applied Physics Express,2012,5(9):091202. 11 Jakub K, Beata B, Maria G. Electrical and structural properties of Nb-doped SrTiO3 ceramics[J]. Journal of Electroceramics,2010,24(4):326. 12 Liu Xueting, He Chongbin, Xue Yirong, et al. The influence of doped Mg2+ SrTiO3 film photoelectric properties[J]. Journal of Functional Materials,2013,44(z1):105 (in Chinese). 刘雪婷,何崇斌,薛异荣,等.Mg2+掺杂对SrTiO3薄膜光电特性的影响[J].功能材料,2013,44(z1):105. 13 Jiang S W, Zhang Q Y, Li Y R, et al. Structural characteristics of SrTiO3 thin films processed by rapid thermal annealing[J]. Journal of Crystal Growth,2005,274(3-4):500. 14 Tang Z H, Xiong Y, Xu D L, et al. Resistive switching properties of sol-gel-derived V-doped SrTiO3 thin films[J]. Journal of Electronic Materials,2013,42(8):2510. 15 Sakdanuphab R, Sakulkalavek A. Resistive switching behavior of Ti/ZnO/Mo thin film structure for nonvolatile memory applications[J]. Key Engineering Materials,2015,659:588. 16 Ma G, Tang X, Zhang H, et al. Effects of stress on resistive switching property of the NiO RRAM device[J]. Microelectronic Engineering,2015,139:43. 17 Choi J H, Yu C G, Park J T, et al. Electrical characteristics of RRAM with HfO2 annealing temperatures and thickness[J]. Transactions on Electrical & Electronic Materials,2014,18(3):68. 18 Yang X, Lu Y, Lee J, et al. Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resis-tance random access memory[J]. Applied Physics Letters,2016,108(1):2531. 19 Jia C L, Lentzen M, Urban K. Atomic-resolution imaging of oxygen in perovskite ceramics[J]. Science,2003,299(5608):870.
渝公网安备50019002502923号 版权所有：《材料导报》编辑部
2018, Vol. 32 
