Preparation of ZnO Thin Films by Electron Beam Annealing Method
LI Yanli1,2, XU Zhuang3, LI Hui4, KONG Xiangdong1, HAN Li1, ZHANG Xuena1,2
1 Electron Beam Lithography Technology Research Group, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190; 2 University of Chinese Academy of Sciences, Beijing 100049; 3 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000; 4 Group of Solar Cell Technology, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190;
Abstract: The ZnO precursor film was prepared by sol-gel method and annealed by the electron beam which replaced the conventional furnace. The accelerating voltage was fixed at 10 kV and the annealing duration was fixed at 5 min. The annealing temperature was within the range of 600 ℃ to 900 ℃ by adjusting the focus beam current and electron beam current . The results of scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric force microscopy (PFM) showed that the annealed ZnO thin film was a kind of microcrystalline film, grew along the preferred (002) peak and presented piezoelectric effect. With the increase of annealing temperature, the grain size increased gradually, the crystallinity and orientation of thin film were better, the piezoelectric effect was more and more obvious.
李艳丽, 许壮, 李辉, 孔祥东, 韩立, 张雪娜. 电子束退火法制备ZnO薄膜*[J]. 《材料导报》期刊社, 2017, 31(2): 41-45.
LI Yanli, XU Zhuang, LI Hui, KONG Xiangdong, HAN Li, ZHANG Xuena. Preparation of ZnO Thin Films by Electron Beam Annealing Method. Materials Reports, 2017, 31(2): 41-45.
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2017, Vol. 31 
