Recent Progress on Vanadium Dioxide Thin Film at Terahertz Range
ZHANG Huafu1, SHA Hao1, WU Zhiming2, JIANG Yadong2, WANG Cao1, SUN Yan1, JING Qiang1
1.School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049 2.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054
Abstract: The reversible semiconductor-metal phase transition of vanadium dioxide thin films can be induced by heating at~68 ℃, accompanied by a giant and abrupt change of terahertz transmission. Moreover, the semiconductor-metal phase transition of vanadium dioxide thin film can be triggered not only by heating but also by optical excitation, electric field, terahertz field, etc. Owing to its excellent phase transition characteristics, vanadium dioxide thin film can be used in a wide variety of applications such as terahertz switching, terahertz modulator. As a result, vanadium dioxide thin film has been a hot topic in functional materials and devices at terahertz range. The researches mainly focus on the preparation me-thods, the phase transition properties and the applications of vanadium dioxide thin films at terahertz frequency range. Exploring a simple and controllable thin film preparation method plays an important role in improving the semiconductor-mental transition properties and the application of vanadium dioxide. The methods mainly include pulsed laser deposition, magnetron sputtering and sol-gel method. Pulsed laser deposition can prepare high-quality vanadium dioxide films and was firstly used to investigate the semiconductor-metal transition pro-perties of vanadium dioxide thin film at terahertz range. Reactive magnetron sputtering technique from a metal vanadium target in Ar/O2 atmosphere is often used to deposit vanadium dioxide thin films. However,in order to prepare a vanadium dioxide phase, reactive sputtering requires a narrow range of experimental conditions, especially for the O2 flow ratio, which is unfavorable for improving the structure and the property. Hence, magnetron sputtering from a VO2 ceramic target is exploited to prepare vanadium dioxide thin film. Although both pulsed laser deposition and magnetron sputtering are widely used to prepare vanadium dioxide film, they have disadvantages of complex equipment and high cost. Sol-gel me-thod, as compared to pulsed laser deposition and magnetron sputtering, has advantages of simple equipment, small cost and easily doping. Study on semiconductor-mental transition properties of vanadium dioxide includes different triggering stimulus and performance optimization. Phase transition induced by heating is easy to be controlled, but it undergoes a long response time. For phase transition triggered by light and voltage, the case is on the contrary. Presently, not only improving the process conditions and doping but also designing the metamaterial has been utilized to improving the phase transition performance of vanadium dioxide film. Due to these unique phase transition properties, vanadium dioxide films have been intensively exploited in many potential applications such as terahertz switching elements, switchable linear polarizer, tunable filter, frequency selective surface and absorber. This review summarizes the preparation methods of vanadium dioxide thin film in recent years, the semiconductor-metal phase transition properties and its applications at terahertz frequency range.
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2019, Vol. 33 
