The Stored Energy Evolution and Recrystallization Behavior of Tantalum Plate During Annealing
ZHU Jialin1, DENG Chao1,2, LIU Yahui1, LIU Shifeng1, ZHANG Yu1
1 College of Materials Science and Engineering, Chongqing University, Chongqing 400044; 2 Electron Microscopy Center of Chongqing University, Chongqing 400044
Abstract: High purity tantalum plates were deformed to 87% reduction in thickness by unidirectional rolling and clock rolling, respectively. The resultant specimens were divided into two groups. One was pre-recovered at 800 ℃ in a furnace, and then was annealed at 1 300 ℃ for 30min to generate completely recrystallized microstructure, while the other group was annealed and recrystallized without any treatment. X-ray line profile analysis (XLPA) was adopted to quantify the bulk stored energy of tantalum plates under the above-mentioned two different rolling methods. Aided by the electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM), the microstructures of pre-recovered and recrystallized tantalum plates were characterized, and the local-region stored energies of differently oriented grains in the pre-recovered samples were evaluated. The results showed that the stored energy gap of {111} ([111]//ND, ND is normal direction) and {100} ([100]//ND) orientation grain decreased obviously when 87% clock-rolled tantalum plates experienced 800 ℃ pre-recovery treatment. Meanwhile, the subsequent recrystallization grains were more homogeneous and equiaxial. This can be attributed to the subgrain-nucleation-dominated recrystallization mechanism induced by the introduction of low-temperature pre-recovery treatment, and moreover, the considerable decline of recrystallization driving force resulted from the release of stored energy in the matrix.
祝佳林, 邓超, 柳亚辉, 刘施峰, 张玉. 钽板退火过程中的储存能演变与再结晶行为[J]. 材料导报, 2019, 33(4): 654-659.
ZHU Jialin, DENG Chao, LIU Yahui, LIU Shifeng, ZHANG Yu. The Stored Energy Evolution and Recrystallization Behavior of Tantalum Plate During Annealing. Materials Reports, 2019, 33(4): 654-659.
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2019, Vol. 33 
