Abstract: Recently, lead-free solders have received considerable attention in electronic industry. However, only a small proportion of significant research relates to solders in high temperature environment. For lead-free solders with melting temperature in the range of 280—400 ℃, Au-Ge, Au-Sn, Au-Si and other Au-based solders have gradually replaced the traditional high lead solders and are widely used in the filed of microelectronic packages. Au-Ge alloy has the advantages of good conductivity, thermal conductivity, corrosion resistance and high tensile strength. What’ more, the high-temperature resistant performance of Au-Ge solder is obviously better than that of Au-Sn, Au-Si solders, especially suitable for the high temperature environment. Nonetheless, there are some shortcomings of Au-Ge solder, which seriously affect its production, application and popularization. On the one hand, Au-Ge solder is difficult to be machined due to the existence of Ge, which critically affects its application. On the other hand, excessive Au content in Au-Ge solder leads to its high cost. Consequently, researchers add appropriate alloy elements to modify Au-Ge filler metal and try to develop Au-Ge ternary alloys system. Researchers found that the method of horizontal continuous casting can eliminate machining process and directly produce the desired diameter to solve the processing problem caused by the high brittleness of the Au-Ge alloy. In addition to the study of Au-Ge binary alloy, researchers have also carried out that of Au-Ge-X ternary alloys system. The research shows that the addition of low melting point elements, such as Sn, Sb, and In, can effectively reduce the melting point of solder and meet the quality requirements. Compared with Au-12Ge alloy, the addition of Sn and Sb elements can not only reduce the melting temperature and maintain good wettability, but also inhibit the excessive growth of the interface layer. Among them, appropriate Sn element can also inhibit the coarseness of Ge grains. Sb element can increase the extensibility of Au-Ge solder. Au-Ge-Ni alloy can form ohmic contact with GaAs, which will increases the resistance of the solder bulk. Besides, Au-Ge-Ni solder can form “equal resistance” between soldering seam and base metal to play a better role in bonding. However, if excessive Ni is added to Au-12Ge alloy, coarse GeNi compounds will be formed. After agglomeration, the particles will become large and unevenly distributed, which will seriously affect the strength of joints. The addition of In, Sb elements to Au-Ge solder can also play a role in grain refinement. Up to now, the study of Au-Ge ternary alloys is insufficient and further research on the wettability, mechanical properties and solder joint reliability are need to be carried out to promote its application. In this paper, the research status of Au-Ge based ternary alloys was summarized and introduced. What’s more, the effects of Sn, Ni, In, Sb elements on the properties and microstructures of Au-Ge solder were analyzed. On the basis of summing up the existing literature, this paper looked forward to the general development process and future development direction of Au-Ge based ternary alloys, pointing out the existing problems and solutions.
王子伊, 薛松柏, 王剑豪, 刘晗, 温丽. 添加合金元素改善Au-Ge钎料组织及性能的研究进展[J]. 材料导报, 2020, 34(23): 23145-23153.
WANG Ziyi, XUE Songbai, WANG Jianhao, LIU Han, WEN Li. Research Progress of Adding Alloying Elements to Improve the Microstructure and Properties of Au-Ge Solder. Materials Reports, 2020, 34(23): 23145-23153.
1 Neoh G P, Thong K C, Khor L. In: 36th International Electronics Manufacturing Technology Conference. Johor Bahru,2014,pp.1. 2 Gomidelović L, ivković D, Talijan N, et al. Materials Research Innovations,2015,19(2),145. 3 Liu W, An R, Wang C, et al. Micromachines,2018,9(7),346. 4 Abtew M, Selvaduray G. Materials Science & Engineering R: Reports,2000,27(5),95. 5 Wang F, Li D, Tian S, et al. Microelectronics Reliability,2017,73,106. 6 Bao N, Hu X, Li Q. Materials Research Express,2019,6(7),076306. 7 Gan G, Xia D, Liu X, et al. Soldering & Surface Mount Technology,2019,31(2),85. 8 Wang F, Chen H, Huang Y, et al. Journal of Materials Science: Mate-rials in Electronics,2019,30(4),3222. 9 Zhang X P, Yin L M, Yu C B. Chinese Journal of Materials Research,2008,22(1),1(in Chinese). 张新平,尹立孟,于传宝.材料研究学报,2008,22(1),1. 10 Hodúlová E, šimeková B, Kovaíková I, et al. Welding in the World,2014,58(5),719. 11 Mookam N, Tunthawiroon P, Kanlayasiri K. In: IOP Conference Series: Materials Science and Engineering. San Diego,2018,pp.012008. 12 Menon S, George E, Osterman M, et al. Journal of Materials Science: Materials in Electronics,2015,26(6),4021. 13 Son M J, Kim M, Lee T M, et al. Journal of Materials Processing Technology,2018,259,126. 14 Son M J, Jeong J W, Kim H, et al. Journal of Materials Science: Mate-rials in Electronics,2018,29(23),19620. 15 El-Daly A A, Ibrahiem A A, Hammad A E. Journal of Alloys and Compounds,2018,767,464. 16 Gumaan M S, Shalaby R M, Mohammed Yousef M K, et al. Soldering & Surface Mount Technology,2019,31(1),40. 17 Plevachuk Y, Tkach O, Svec P, et al. Journal of Phase Equilibria and Diffusion,2019,40(1),86. 18 Fang J H, Xie M, Zhang J M, et al. The Chinese Journal of Nonferrous Metals,2017(8),1659(in Chinese). 方继恒,谢明,张吉明,等.中国有色金属学报,2017(8),1659. 19 Wang Y, Wu Y, Xia X, et al. Japanese Journal of Applied Physics.2019,58,SDDL03. 20 Rerek T, Skowronski L, Kobierski M, et al. Applied Surface Science,2018,451,32. 21 Yamamoto S, Matsumaru K, Suemasu T. IEEJ Transactions on Sensors and Micromachines,2006,126,649. 22 Zhu Z X, Li C C, Liao L L, et al. Journal of Alloys and Compounds,2016,671,340. 23 Kisiel R, Myśliwiec M. In: 41st International Spring Seminar on Electronics Technology (ISSE). Zlatibor,2018,pp.1. 24 Ismail A M, Samu G F, Balog A, et al. ACS Energy Letters,2018,4(1),48. 25 Tobón J, Serna-Giraldo C P, Sánchez H. Welding International,2015,29(8),594. 26 Larsson A, Tollefsen T A, Løvvik O M, et al. Metallurgical and Materials Transactions A,2019,50(10),4632. 27 Zhang L G, Xu K, Zhao M, et al. Precious Metals,2014,35(3),71(in Chinese). 张利广,许昆,赵明,等.贵金属,2014,35(3),71. 28 Hu Y F, Li X X, Yu S L, et al. Electric Welding Machine,2008,38(9),57(in Chinese). 胡永芳,李孝轩,禹胜林,等.电焊机,2008,38(9),57. 29 ivkovic' D, C' ubela D, Manasijevic' D, et al. Materials Testing,2017,59(2),118. 30 Zhu Y, Yang A H, Zhang J X, et al. Special Casting & Nonferrous Alloys,2015,35(10),1077(in Chinese). 朱勇,阳岸恒,张济祥,等.特种铸造及有色合金,2015,35(10),1077. 31 Zhu W X, Zhu L Y, Li G L, et al. Precious Metals,2014(S1),164(in Chinese). 朱武勋,朱利亚,李光俐,等.贵金属,2014(S1),164. 32 Chidambaram V, Hattel J, Hald J. Microelectronic Engineering,2011,88(6),981. 33 Xu L J, Li X X, Liu G, et al. Modern Radar,2010(12),60(in Chinese). 许立讲,李孝轩,刘刚,等.现代雷达,2010(12),60. 34 Chidambaram V, Yeung H B, Shan G. Journal of Electronic Materials,2012,41(8),2107. 35 Gerbi A, Gonzalez C, Buzio R, et al. Physical Review B,2018,98(20),205416. 36 Wagner T, Aulbach J, Schäfer J, et al. Physical Review Materials,2018,2(12),123402. 37 Wang J, Liu Y J, Tang C Y, et al. Thermochimica Acta,2011,512(1),240. 38 Li J, Acoff V L, Gong X. Gold Bulletin,2015,48(1),47. 39 Yang A H, Xie H C. Precious Metals,2007,28(1),63(in Chinese). 阳岸恒,谢宏潮.贵金属,2007,28(1),63. 40 Lang F, Yamaguchi H, Ohashi H, et al. Journal of Electronic Materials,2011,40(7),1563. 41 Lau F L, Made R I, Putra W N, et al. Microelectronics Reliability,2013,53(9),1581. 42 Li Y Z, Mao X, Shi X, et al. Scientia Sinica(Physica,Mechanica & Astronomica),2019,49(1),76(in Chinese). 李玉智,毛鑫,石轩,等.中国科学:物理学 力学 天文学,2019,49(1),76. 43 Gaudet S, Detavernier C, Kellock A J, et al. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,2006,24(3),474. 44 Li K, Hou B, Bian H, et al. Fuel,2019,252,281. 45 Zhang S, Qi X, Yang M, et al. Journal of Materials Science: Materials in Electronics,2019,30(10),9171. 46 Weyrich N, Jin S, Duarte L I, et al. Journal of Materials Engineering and Performance,2014,23(5),1585. 47 Wang J, Cui J, Kou H C, et al. Rare Metals,2019,38(1),52. 48 Leinenbach C, Valenza F, Giuranno D, et al. Journal of Electronic Materials,2011,40(7),1533. 49 Wang J, Leinenbach C, Roth M. Journal of Alloys and Compounds,2009,481(1),830. 50 Zhang Y S, Xu R M, Liu D H, et al. Journal of Shandong University(Engineering Science),1994,24(4),372(in Chinese). 张玉生,许汝民,刘东红,等.山东工业大学学报,1994,24(4),372. 51 Xie H C, Yang A H, Zhuang D X, et al. Precious Metals,2011,32(1),35(in Chinese). 谢宏潮,阳岸恒,庄滇湘,等.贵金属,2011,32(1),35. 52 Li Z, Yi Y, He D, et al. Metals,2017,7(7),247. 53 Li Z H, Yi Y P, He D Q. Ordnance Material Science and Engineering,2017(5),41(in Chinese). 李再华,易幼平,贺地求.兵器材料科学与工程,2017(5),41. 54 Jin S, Duarte L I, Huang G, et al. Monatshefte für Chemie-Chemical Monthly,2012,143(9),1263. 55 Liu S F, Tan G H, Xiong J R, et al. Special Casting & Nonferrous Alloys,2016,36(8),785(in Chinese). 刘生发,谭广华,熊杰然,等.特种铸造及有色合金,2016,36(8),785. 56 Li Y, Zheng P J, Zhang J B, et al. Materials Reports A: Research Papers,2014,28(11),108(in Chinese). 李勇,郑碰菊,张建波,等.材料导报:综述篇,2014,28(11),108. 57 Wang J, Leinenbach C, Roth M. Journal of Alloys and Compounds,2009,485(1),577. 58 Zeng G, McDonald S, Nogita K. Microelectronics Reliability,2012,52(7),1306. 59 Chidambaram V, Hald J, Hattel J. Journal of Alloys and Compounds,2010,490(1),170. 60 Weyrich N, Leinenbach C. Journal of Materials Science,2013,48(20),7115.