Influence of Lattice Distortion on the Metal-Insulator Transition Temperature of VO2
LIN Tiegui1,2, ZHANG Yufen1
1 College of Engineering, Shanxi Agricultural University, Jinzhong 030801, China; 2 State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
Abstract: In this work, VO2 thin films were prepared on the quartz glass substrates by using high power impulse magnetron sputtering. As-deposited films had a typical metal-insulator transition (MIT) and the lowest phase transition temperature was only 32 ℃. The X-ray diffraction patterns revealed that the lattice distortions in the as-deposited VO2 (M) films were different, and the MIT temperature decreased with the interplanar spa-cing difference between the VO2 (M) (011) and standard VO2 (R) (110). According to the experimental results, the crystal structure and density of states in MIT of the VO2 were studied by the ab initio molecular dynamics to evaluate the influence of the lattice distortion on the MIT temperature. The results showed that the crystal structure in the MIT was gradually transformed from initial VO2 (M) to the VO2 (R) with the increase of the temperature, coupled with the decrease of the band gap near the Fermi energy. In the end, VO2 supercells were completely transformed into the metallic state, in which the Fermi energy is occupied by electrons. Furthermore, the MIT temperature was also related to the difference in the interplanar spacing between the initial VO2 (M) (011) and standard VO2 (R) (110), and the less the difference in the interplanar spacing, the lower the MIT temperature, which might be the nature resulting in the reduction of the MIT temperature.
林铁贵, 张玉芬. 晶格畸变对VO2相变温度的影响[J]. 材料导报, 2020, 34(6): 6057-6061.
LIN Tiegui, ZHANG Yufen. Influence of Lattice Distortion on the Metal-Insulator Transition Temperature of VO2. Materials Reports, 2020, 34(6): 6057-6061.
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2020, Vol. 34 
