Abstract: Aseries of TaN films with different working pressures were prepared on Al2O3 ceramic substrate by reactive magnetron sputtering technology. Using X-ray diffractometer (XRD), atomic force microscope (AFM), step profiler, scratch tester and four-probe resistance meter to study the influence of the microstructure, roughness, deposition rate, film-base bonding force and electrical performance of TaN films with different working pressures. The results show that the magnetron sputtering TaN films are mainly fcc δ-TaN crystal structure; when the working pressure is 0.4 Pa, the film-base bonding force and deposition rate of the TaN film are the highest, the conductivity and density are the best, and its bonding force, Deposition rate, square resistance and roughness are 53.2 N, 4.28 nm/min, 45.06 Ω/□ and 1.09 nm, respectively.
张玉宝, 李志刚, 王艺, 蒋继成, 姚钢, 赵弘韬. 工作气压对磁控溅射TaN薄膜微结构和性能的影响[J]. 材料导报, 2021, 35(z2): 60-63.
ZHANG Yubao, LI Zhigang, WANG Yi, JIANG Jicheng, YAO Gang, ZHAO Hongtao. Effect of Work Pressure on Microstructure and Properties of Magnetron Sputtering TaN Coatings. Materials Reports, 2021, 35(z2): 60-63.
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