SiO2掺杂浓度对ZnO压敏陶瓷结构与性能的影响

材料导报

2019, Vol. 33

Issue (z1): 161-164

无机非金属及其复合材料

SiO₂掺杂浓度对ZnO压敏陶瓷结构与性能的影响

陈永佳¹, 刘建科²

1 陕西国防工业职业技术学院,西安 710300
2 陕西科技大学文理学院,西安 710021

Effect of SiO₂ Doping Concentrations on the Microstructure and Properties of ZnO-based Varistor Ceramics

CHEN Yongjia¹, LIU Jianke²

1 Shaanxi Institute of Technology, Xi’an 710300
2 School of Arts and Sciences, Shaanxi University of Science and Technology, Xi’an 710021

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摘要以(96.0-x)ZnO-2.0Pr₆O₁₁-0.5Sb₂O₃-0.5Co₂O₃-0.5Cr₂O₃-0.5Y₂O₃-xSiO₂为配方制备压敏电阻陶瓷,其中比例均为物质的量比,x分别为0.0%、0.8%、1.6%、2.4%。研究了SiO₂的掺杂浓度对该体系压敏电阻陶瓷微观结构和电学性能的影响。研究表明,压敏电阻陶瓷的主晶相为六方纤锌矿型结构,同时还含有SbYO₃、ZnCr₂O₄、ZnCo₂O₄、Zn₇SbO₁₂、Zn₂SiO₄和Pr₂O₃等晶相。随着SiO₂掺杂浓度的增大,ZnO压敏陶瓷的三个强衍射峰逐渐向低角度方向偏移,平均晶粒尺寸先减小后增大。当掺杂浓度为1.6%时,平均晶粒尺寸达到最小值(1.5 μm),击穿场强E1mA达到最大值(385.6 V/mm),非线性系数α达到最大值(84.2),漏电流I_L达到最小值(1.1 μA)。通过分析烧结机理、固溶体形成机理以及能量最低原理,本工作对以上现象进行了理论解释。

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	陈永佳
	刘建科

关键词: ZnO压敏陶瓷 SiO₂掺杂微观结构电学性能烧结机理

Abstract: The influences of SiO₂ doping concentrations on the microstructures and electrical properties of (96.0-x)ZnO-2.0Pr₆O₁₁-0.5Sb₂O₃-0.5Co₂O₃-0.5Cr₂O₃-0.5Y₂O₃-xSiO₂ system varistor ceramics had been researched in detail, wherein x was 0.0%, 0.8%, 1.6%, 2.4% respectively, and all the proportion were as molar presents. The results showed that the lattice structure of the main crystal phase was hexagonal wurtzite structure. With the increase of SiO₂ concentrations, the three strong diffraction peaks of ZnO varistor ceramics moved to lower angles gradually, the average grain size decreased at first and then increased. As the SiO₂ concentration was 1.6%, the following results were obtained: The average grain size reached the minimum value of 1.5 μm; the breakdown field strength E1mA was 385.6 V/mm and nonlinear coefficient α reached the maximum value of 84.2; the leakage current I_L reached the minimum value of 1.1 μA. The above phenomena were explained systematically by analyzing the sintering mechanism, formation mechanism of solid solution and principle of lowest energy.

Key words: ZnO varistor ceramics SiO₂ doping microstructure electrical properties sintering mechanism

出版日期: 2019-05-25 发布日期: 2019-07-05

ZTFLH:

TQ174

基金资助: 陕西省教育厅2018年度专项科学研究计划项目(18JK0068)

作者简介: 陈永佳,助教,硕士研究生毕业。主要从事半导体功能材料与器件的研究。1208091455@qq.com

引用本文:

陈永佳, 刘建科. SiO₂掺杂浓度对ZnO压敏陶瓷结构与性能的影响[J]. 材料导报, 2019, 33(z1): 161-164.
CHEN Yongjia, LIU Jianke. Effect of SiO₂ Doping Concentrations on the Microstructure and Properties of ZnO-based Varistor Ceramics. Materials Reports, 2019, 33(z1): 161-164.

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http://www.mater-rep.com/CN/ 或 http://www.mater-rep.com/CN/Y2019/V33/Iz1/161

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