Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface
YUAN Qi1, CHA Limei1, MING Wenquan1, YANG Xiubo1, LI Shiyong1, HAN Junfeng2
1 College of Materials Science and Engineering, Hunan University, Changsha 410082; 2 Department of Physics,Beijing Institute of Technology,Beijing 100081
Abstract: CuInxGa1-xSe2 (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400 ℃. A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500 ℃. The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600 ℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe2/Mo. In addition, the orientations of MoSe2 grains may effect on the formation of second phases.
袁琦, 茶丽梅, 明文全, 杨修波, 李石勇, 韩俊峰. 硒化温度对CIGS/Mo界面微观结构和化学成分的影响[J]. 《材料导报》期刊社, 2018, 32(11): 1787-1790.
YUAN Qi, CHA Limei, MING Wenquan, YANG Xiubo, LI Shiyong, HAN Junfeng. Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface. Materials Reports, 2018, 32(11): 1787-1790.
1 Kaneshiro J, Gallard N, Rocheleau R, et al. Advances in copper-chalcopyrite thin for films for solar energy conversion[J].Solar Energy Materials & Solar Cells,2010,94(1):12. 2 Nakada T. Invited paper: CIGS-based thin film solar cells and mo-dules: Unique material properties[J].Electronic Materials Letters,2012,8(2):179. 3 Rui K, Yagioka T, Adachi S, et al. New world record Cu(In,Ga)(Se,S)2 thin film solar cell efficiency beyond 22%[C]∥Photovoltaic Specialists Conference. Portland,2016:1287. 4 Seike S, Shiosaki K, Kuramoto M, et al. Development of high-efficiency CIGS integrated submodules using in-line deposition technology[J].Solar Energy Materials & Solar Cells,2011,95(1):254. 5 Niki S, Contreras M, Repins I, et al. CIGS absorbers and processes[J].Progress in Photovoltaics Research & Applications,2010,18(6):453. 6 Hibberd C J, Chassaing E, Liu W, et al. Non-vacuum methods for formation of Cu(In,Ga)(Se,S)2 thin film photovoltaic absorbers[J].Progress in Photovoltaics Research & Applications,2010,18(6):434. 7 Dejene F B. Material and device properties of Cu(In,Ga)Se absorber films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor[J].Current Applied Physics,2010,10(1):36. 8 Kohara N, Nishiwaki S, Hashimoto Y, et al. Electrical properties of the Cu(In,Ga)Se2/MoSe2/Mo structure[J].Solar Energy Mate-rials & Solar Cells,2011,67(1):209. 9 Pouzet J, Bernede J C. MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films[J].Revue De Physique Appliquee,1990,25(8):807. 10 Lin Y C, Hong D H, Hsieh Y T, et al. Role of Mo∶Na layer on the formation of MoSe2 phase in Cu(In,Ga)Se2 thin film solar cells[J].Solar Energy Material & Solar Cells,2016,155:226. 11 Fleutot B, Lincot D, Jubault M, et al. GaSe formation at the Cu(In,Ga)Se2/Mo interface—A novel approach for flexible solar cells by easy mechanical lift-off[J].Advanced Materials Interfaces,2014,1(4):n/a.12 Caballero R, Nichterwitz M, Steigert A, et al. Impact of Na on MoSe2 formation at the CIGSe/Mo interface in thin-film solar cells on polyimide foil at low process temperatures[J].Acta Materialia,2014,63(2):54. 13 Han J, Liao C, Jiang T, et al. Investiagtion of copper indium selenide material growth by selenization of metallic precursors[J].Journal of Crystal Growth,2013,382(6):56. 14 Wada T, Kohara N, Negami T, et al. Chemical and structural characterization of Cu(In,Ga)Se2/Mo interface in Cu(In,Ga)Se2 solar cells[J].Japanese Journal of Applied Physics,1996,35(10):L1253. 15 Hsieh T P, Chuang C C, Wu C S, et al. Effects of residual copper selenide on CuInGaSe2 solar cell[J].Solid State Electronics,2011,56(1):175. 16 Wei S H, Zhang S B, Zunger A. Effects of Na on the electrical and structure properties of CuInSe2[J].Science China(Physics, Mecha-nics & Astronomy),2013,85(10):1861. 17 Ishizuka S, Yamada A, Islam M M, et al. Na-induced variations in the structural,optical,and electrical properties of Cu(In,Ga)Se2 thin films[J].Journal of Applied Physics,2009,106(3):434. 18 Bodegard M, Granath K, Rocket A, et al. Behavior of Na implanted into Mo thin films during annealing[J].Solar Energy Materials & Solar Cells,1999,58(2):199. 19 Stolt L, Hedstrom J, Kessler J, et al. ZnO/CdS/CuInSe2 thin-film solar cells with improved performance[J].Applied Physics Letters,1993,62(6):597. 20 Song X, Caballero R, Felix R, et al. Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure[J].Journal of Applied Physics,2012,111(3):613. 21 Rudmann D, Bilger G, Kaelin M, et al. Effects of NaF coevaporation on structural properties of Cu(In,Ga)Se2 thin films[J].Thin Solid Films,2003,s431-432(3):37. 22 Abou-Ras D, Kostorz G, Bremaud D, et al. Formation and characterisation of MoSe2 for Cu(In,Ga)Se2 based solar cells[J].Thin Solid Films,2005,s480-481(3):433. 23 Nishiwaki S, Kohara N, Negami T, et al. MoSe2 layer formation at Cu(In,Ga)Se2/Mo interfaces in high efficiency Cu(In1-xGax)Se2 solar cells[J].Japanese Journal of Applied Physics,1998,37(1):L71.
渝公网安备50019002502923号 版权所有：《材料导报》编辑部
2018, Vol. 32 
