Photoconductivity and Photovoltaic Effect of Epitaxial Mn-doped BiFeO3 Thin Film Capacitor
PENG Zengwei1, LIU Baoting2
1 College of Science and Technology, North China Electric Power University, Baoding 071051, China; 2 College of Physics Science and Technology, Hebei University, Baoding 071002, China
Abstract: Epitaxial Mn-doped BiFeO3 (BFMO) thin film was directly deposited on SrRuO3 (SRO) buffered (001)-orientation SrTiO3 (STO) substrate by radio frequency magnetron sputtering. Using integrated Pt/SRO to be top electrode to form the symmetric SRO/BFMO/SRO capacitor. X-ray diffraction discovers that BFMO film is of good epitaxial structure. Polarization-electric field hysteresis loops and pulsed polarization show that epitaxial SRO/BFMO/SRO capacitor possesses excellently ferroelectric polarization. The increased leakage current density is acquired when the SRO/BFMO/SRO capacitor is illuminated by the purple light of 5 mW/cm2 with a wavelength of 404 nm. The leakage current density is 0.14 A/cm2 and 0.34 A/cm2 at 8 V without and with illumination, and 0.13 A/cm2 and 0.33 A/cm2 at -8 V without and with illumination, respectively. The ohmic conduction is the dominated leakage mechanism which is not changed by illumination. Photovoltaic effect of the SRO/BFMO/SRO capacitor is mainly controlled by the ferroelectric polarization. Mn doping increases the short circuit current density in photovoltaic effect of the SRO/BFMO/SRO capacitor, compared with that of pure BiFeO3 film capacitor.
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