Effect of NH3 /N2 Mixed Plasma Pretreatment on the Performance of Ge MOS Devices
WU Liying1,*, BAI Rongxu2, QU Minni1, FU Xuecheng1, TIAN Miao1, MA Ling1, WANG Ying1, CHENG Xiulan1
1 Center for Advanced Electronic Materials and Devices, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University,Shanghai 200240, China 2 Beneq Oy Shanghai Rep. Office, Shanghai 200135, China
Abstract: The germanium substrates were pretreated in situ with a mixture of NH3 and N2 plasma, and the native oxide GeOxwere transformed to GeOyNz. The XPS results showed that with the increase of pretreatment time, the thickness of GeOyNz increased slightly. For the germa-nium MOS capacitor samples with structure of 500 nm Al/20 nm Ti/10 nm HfO2/Ge at the bias voltage of 1 V, the leakage current of the samples without in-situ plasma pretreatment were an order of 1×10-4A/cm2, while the leakage current of the samples under the condition of 120 s NH3/N2 mixed plasma pretreatment were reduced to an order of 1×10-5A/cm2. The C-V curves of all samples pretreated by NH3/N2 plasma showed no obvious warpage deformation, indicating that the interface trap charge density of the samples was low; according to the calculation of C-V curve, the equivalent capacitance of the sample for 60 s NH3/N2 mixed plasma pretreatment is about 17, which is less than the dielectric constant value of ideal HfO2, indicating that there is still a non-negligible interface capacitance under the pretreatment condition. Compared with other pretreatment methods,in-situ pretreatment of germanium substrate by NH3/N2 mixed plasma can more effectively improved the quality of interface of atomic layer deposited HfO2 on germanium substrate, inhibited the diffusion of Ge to HfO2, and played an important role in limiting the trap charge the interface. It had more potential advantages in improving the performance of Ge-MOS devices in industrial production.
乌李瑛, 柏荣旭, 瞿敏妮, 付学成, 田苗, 马玲, 王英, 程秀兰. NH3和N2混合等离子体预处理对锗MOS器件性能的影响[J]. 材料导报, 2021, 35(14): 14012-14016.
WU Liying, BAI Rongxu, QU Minni, FU Xuecheng, TIAN Miao, MA Ling, WANG Ying, CHENG Xiulan. Effect of NH3 /N2 Mixed Plasma Pretreatment on the Performance of Ge MOS Devices. Materials Reports, 2021, 35(14): 14012-14016.
1 Toriumi A, Nishimura T. Japanese Journal of Applied Physics, 2017, 57, 010101. 2 Shang H, Frank M M, Gusev E P, et al. IBM Journal of Research and Development, 2006, 50, 377. 3 Gusev E P, Shang H, Copel M, et al. Applied Physics Letters, 2004, 85, 2334. 4 Houssa M, Pourtois G, Caymax M, et al. Surface Science, 2008, 602, L25. 5 Pourtois G, Houssa M, Delabie A, et al. Applied Physics Letters, 2008, 92, 032105. 6 Taoka N, Harada M, Yamashita Y. Applied Physics Letters, 2008, 92, 113511. 7 Li X F, Liu X J, Zhang W Q, et al. Applied Physics Letters, 2011, 98, 162903. 8 Zhang R, Huang P C, Taoka N, et al. Applied Physics Letters, 2016, 108, 052903. 9 Wang X, Xiang J, Wang W, et al. Applied Surface Science, 2015, 357, 1857. 10 Wang X, Xiang J, Zhao C, et al. In: IEEE Electron Devices Technology and Manufacturing Conference (EDTM). Japan, 2017, pp.162. 11 Hosoi T, Kutsuki K, Okamoto G, et al. Applied Physics Letters, 2009, 94, 202112. 12 Xie Q, Musschoot J, Schaekers M, et al. Applied Physics Letters, 2010, 97, 222902. 13 Zhou L, Wang X, Han K, et al. IEEE Transactions on Electron Devices, 2019, 66,1669. 14 Li X F, Liu X J, Cao Y Q, et al. Applied Surface Science,2013,264,783. 15 Matsubara H, Sasada T, Takenaka M. Applied Physics Letters, 2008, 93, 032104. 16 Kita K, Suzuki S, Nomura H, et al. Japanese Journal of Applied Physics, 2008, 47, 2349. 17 Sasada T, Nakakita Y, Takenaka M, et al. Journal of Applied Physics, 2009, 106, 073716. 18 Chui C O, Ito F, Saraswat K C. IEEE Electron Device Letters, 2004, 25, 613. 19 Kuzum D, Pethe A J, Krishnamohan T, et al. In: Technical Digest—International Electron Devices Meeting.Washington DC, USA, 2007, pp. 723. 20 Tatsuro M, Tetsuji Y, Masayasu N, et al. Applied Physics Letters, 2004,85,3181. 21 Oshima Y, Shandalov M, Sun Y, et al. Applied Physics Letters, 2009, 94, 183102. 22 Cao Y Q, Chen J, Liu X J, et al. Applied Surface Science, 2015, 325, 13. 23 Zhao Y, Wang L, Zhang J L, et al. Acta Physico-Chimica Sinica, 2014, 30(4), 738 (in Chinese). 赵越,王丽,张家良,等. 物理化学学报,2014, 30(4), 738. 24 Taylor J A, Lancaster G M, Rabalais J W. Journal of Electron Spectroscopy Related Phenomena, 1978, 13, 435. 25 Larkins F P, Lubenfeld A. Journal of Electron Spectroscopy Related Phenomena, 1979, 15, 137. 26 Cao P J, Zhu D L, Ma X C, et al. Journal of Vacuum Science and Technology, 2005, 25(5), 328 (in Chinese). 曹培江,朱德亮,马晓翠,等. 真空科学与技术学报, 2005,25(5), 328. 27 Pashutski A, Folman M. Surface Science, 1989, 216, 395. 28 Chi X W, Lan X L, Lu C, et al. Materials Research Express, 2016, 3, 035012. 29 Maeda T, Nishizawa M, Morita Y, et al. Applied Physics Letters, 2007, 90, 072911. 30 Wang Y Y,Zhang X,Liu X Y, et al. Science in China(Series E):Technological Sciences,2008,38(6),921 (in Chinese). 王阳元,张兴,刘晓彦,等. 中国科学E辑:信息科学,2008,38(6),921. 31 Won Y, Park S, Koo J, et al. Applied Physics Letters, 2005, 87, 262901.
渝公网安备50019002502923号 版权所有：《材料导报》编辑部
2021, Vol. 35 
