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材料导报  2022, Vol. 36 Issue (Z1): 21050183-6    
  无机非金属及其复合材料 |
宽禁带半导体β-Ga2O3单晶制备工艺研究进展
闫时雨1,2, 纪文涛1,2, 谢克强1,2, 袁晓磊1,2
1 昆明理工大学冶金与能源工程学院,昆明 650093
2 昆明理工大学冶金与能源工程学院,真空冶金国家工程实验室,昆明 650093
Research Progress on Preparation Technology of Wide-bandgap Semiconductor β-Ga2O3 Single Crystal
YAN Shiyu1,2, JI Wentao1,2, XIE Keqiang1,2, YUAN Xiaolei1,2
1 Faculty of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
2 National Engineering Laboratory of Vacuum Metallurgy, Faculty of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
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摘要 Ga2O3是一种宽禁带化合物半导体,因具有优异光电性能成为继SiC和GaN之后的第三代用于功率元件的宽禁带半导体,可广泛应用于航空航天、信息通讯、医疗卫生等领域。β-Ga2O3单晶的制备方法主要有焰熔法、直拉法、导模法、浮区法、垂直布里奇曼法、化学气相传输法等。β-Ga2O3在高温下易分解,这增加了制备大尺寸、高质量β-Ga2O3单晶的难度。本文在详细介绍β-Ga2O3单晶的制备方法,并在此基础上分析了各种方法的优缺点,总结了其在功率器件方面的应用,为β-Ga2O3单晶制备技术优化及拓展应用前景提供了一定的参考。
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闫时雨
纪文涛
谢克强
袁晓磊
关键词:  β-Ga2O3  宽禁带半导体  单晶生长  制备方法    
Abstract: Ga2O3 material has become the third-generation wide-bandgap semiconductor for power components after SiC and GaN due to its excellent optoelectronic properties, and has broad application prospects in aerospace, information communication, medical and health and other fields. The preparation methods of β-Ga2O3 single crystal mainly include Verneuil method, Czochralski method, edge-defined film growth method, floating zone method, vertical Bridgeman method and chemical vapor transport method. β-Ga2O3 is easily decomposed at high temperature, which brings certain difficulties to the preparation of large-sized and high-quality β-Ga2O3 single crystals. In this paper, the preparation methods of β-Ga2O3 single crystal were introduced in detail, and the advantages and disadvantages of each method were analyzed. The application of β-Ga2O3 single crystal in power devices was summarized, and certain reference for optimizing its preparation process and expanding its application prospect was provided.
Key words:  β-Ga2O3    wide-bandgap semiconductor    single crystal growth    preparation method
出版日期:  2022-06-05      发布日期:  2022-06-08
ZTFLH:  O782  
基金资助: 国家自然科学基金(51764033)
通讯作者:  xkqzhh@sina.com   
作者简介:  闫时雨,2019年6月毕业于河北科技大学理工学院,获得工学学士学位。现为昆明理工大学冶金与能源工程学院硕士研究生,在谢克强教授的指导下进行研究。目前主要的研究领域为氧化镓真空碳热还原提镓工艺。
谢克强,昆明理工大学冶金与能源工程学院教授、博士研究生导师。1987年7月毕业于昆明理工大学(原昆明工学院)冶金系有色金属冶金专业,获得工学学士学位;1990年3月昆明理工大学(原昆明工学院)冶金系有色金属冶金专业硕士研究生毕业,获得工学硕士学位; 2003年9月考入昆明理工大学材料与冶金工程学院攻读博士学位,2006年10月获得工学博士学位。1990年至2003年在昆明有色冶金设计研究院(有限公司)工作,2006年至2009年在昆明理工大学材料与冶金工程学院工作,2009年至今在昆明理工大学冶金与能源工程学院工作。主要从事真空冶金、湿法冶金、硅冶金与硅材料等方面的研究工作。以第一作者或通讯作者发表论文多篇,包括Journal of Hazardous Materials, Journal of Cleaner Production, Journal of Environmental Management, Hydrometallurgy等。
引用本文:    
闫时雨, 纪文涛, 谢克强, 袁晓磊. 宽禁带半导体β-Ga2O3单晶制备工艺研究进展[J]. 材料导报, 2022, 36(Z1): 21050183-6.
YAN Shiyu, JI Wentao, XIE Keqiang, YUAN Xiaolei. Research Progress on Preparation Technology of Wide-bandgap Semiconductor β-Ga2O3 Single Crystal. Materials Reports, 2022, 36(Z1): 21050183-6.
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http://www.mater-rep.com/CN/  或          http://www.mater-rep.com/CN/Y2022/V36/IZ1/21050183
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