Abstract: Al-doped ZnO (AZO) has been considered to be one of the most potential transparent conductive oxide (TCO) films due to its high conductivity, light transmittance, abundant and low cost feature. The 30 cm×30 cm AZO films were deposited by RF magnetron sputtering in this work. The influence of working pressure on the phase structure, microstructure, electrical properties as well as optical properties of AZO films were studied, and the modification of the microstructure and properties were achieved. The film deposition rate was lowered by increasing the working pressure. The c-axis orientation preferred grain growth was weakened by increasing the working pressure. The grain size grown up by increasing the working pressure and rod-like grain growth appeared with a length of >100 nm. The minimum resistivity of 1.01×10-3 Ω·cm was achieved at 0.933 Pa, the corresponding average transmittance and Eg were 79.7% and 3.82 eV. The AZO films in this work were beneficial to the TCO application.
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