Abstract: Solar cells have become an important part of clean energy. Under the background of the international policy of carbon peak and carbon neutral, vigorously developing clean energy technology isa fundamental method to solve the energy and environment problems. N-type solar cells have the advantages of large impurity tolerance and long minority carrier lifetime, which are more beneficial to improve the conversion efficiency of the cell and reduce the cost. It is the mainstream of the high-efficiency crystalline silicon solar cells. However, the separation coefficient of boron atom is much higher than that of phosphorus atom, which makes the boron diffusion process more difficult than phosphorus diffusion. Based on these, two-step diffusion method were adopted under a low pressure to study the influence of process parameters such as the gas flow rate, the pre-deposition time and the redistribution time on the square resistance and the uniformity of diffusion sheet. The physical mechanism of the minority carrier life decay of the N-type cells after boron diffusion was analyzed, and the properties of the prepared N-type cells were characterized. Finally, the square resistance inhomogeneity of the P-type emitter is improved less than 4% under the optimized process. And these results provide an important technical reference for the preparation of the high-efficiency N-type solar cells.
马晓波, 曹志杰, 沈宏君, 樊凯, 康欣欣, 米金辉. 低气压下N型晶硅太阳电池P型发射极的两步扩散法制备研究[J]. 材料导报, 2022, 36(22): 21050044-5.
MA Xiaobo, CAO Zhijie, SHEN Hongjun, FAN Kai, KANG Xinxin, MI Jinhui. Study on Preparation of P-type Emitter for N-type Crystalline Silicon Solar Cell by Two-step Diffusion Process Under Low Pressure. Materials Reports, 2022, 36(22): 21050044-5.
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2022, Vol. 36 
