1 Institute of Optoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 2 Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300071
Abstract: Undoubtedly, crystalline silicon solar modules represented by polycrystalline silicon (poly-Si) and monocrystalline silicon (c-Si) play a dominant role in the current photovoltaic market. At present, poly-Si solar modules with low production cost occupy a large market share, but they show relatively low conversion efficiencies. On the contrary, c-Si solar modules with relatively high production cost occupy a smaller market share compared to poly-Si modules, but they behave higher conversion efficiencies. With the progress of silicon material and c-Si wafer cutting technology, the cost of c-Si solar modules is continuously decreasing. There is a booming demand for high-efficient photovoltaic products in the future market. Accordingly, high efficiency c-Si solar cells and modules will be expected to receive more and more attention. Aiming at further enhancing the device performance of c-Si solar cells, numerous research efforts have been performed, which mainly focus on improving the quality of Si wafers to reduce bulk defects, seeking novel passivation materials to reduce surface and interface defects, developing advanced anti-reflection technology (novel light trapping structures and materials) to raise incident light utilization, introducing low-resistant contact technology to cut down series resistance, optimizing PN junction fabrication and device designs et al. Since 2014, successive breakthroughs of conversion efficiency of c-Si silicon solar cells have been achieved with a current record of 26.6% reported by Kaneka Corp., Japan. c-Si solar cells with efficiency 25% or above include Passivated Emitter and Rear Locally diffused (PERL) cells, Interdigitated Back Contact (IBC) cells, Silicon Heterojunction (SHJ) cells, Interdigitated Back Contact and Silicon Heterojunction (HBC) cells, Tunneling Oxide layer Passivation Contact (TOPCon) cells and polysilicon on oxide (POLO) cells, etc. By analyzing the key technologies of these typical c-Si solar cells, it can be concluded that the contact recombination of metal grid electrodes and c-Si at the surface becomes the key influencing factors for the device efficiency. For the sake of weaken such recombination, one approach is to reduce the direct contact area between metal and semiconductor, such as Passivated Emitter and Rear Cell(PERC), PERL and Passivated Emitter and Rear Totally-diffused(PERT)solar cells. Another approach is to develop novel carrier-selective passivation contact, such as SHJ and TOPCon cells, which can achieve excellent surface passivation, separate and transport carriers without opening holes. In addition, the combination of interdigitated back contact and other device structures has become an inevitable choice to maximize light utilization, including IBC and HBC cells. In this paper, the typical high-efficiency c-Si solar cells with conversion efficiencies of 25% or above are firstly summarized. The corresponding device structure, key technology and materials are analyzed in detail, respectively. At last, the development trends and future prospects of high-efficiency c-Si solar cells are performed.
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2019, Vol. 33 
