Study on Electrical Performance Failure of Mono-crystalline Silicon Photovoltaic Module After Outdoor Operation for 17 Years
LAI Haiwen1, HAN Huili1, HUANG Weihong1, DONG Xian2, LI Bingzhi1, SHEN Hui1,2, LIANG Zongcun1,2
1 Institute for Solar Energy Systems, School of Physics, Sun Yat-Sen University,Guangzhou 510275 2 Shunde SYSU Institute for Solar Energy, Foshan 528300
Abstract: The electrical performance failure of a batch of SM55 mono-crystalline silicon PV modules was carried out in this study. These modules were manufactured by Siemens Solar Company, installed in the seaside of Shenzhen and in service for 17 years. The average maximum power (Pmax) degradation of 944 modules was 23.5%, which was mainly caused by the serious reduction of fill factor (FF) and short-circuit (Isc) of module. It could be easily found from the EL and IR images of the modules that brightness along the busbar, which caused by the solder bond failure, and the dark area in the middle of the solar cell were the main defects in EL image. That might be the main reason for the reduction of the FF of the module. Further observation and analysis were conducted on the front fingers of the solar cell by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray photoelectron spectroscopy (XPS). It was found that there was lead acetate needle-like substance formed in the front fingers of the dark area in the solar cell, resulting in the increase of contact resistance and metal resistance. The surface of PV glass has been contaminated, and there was adhesive dust on the edge of PV glass, which led to the drop of the transmittance of the PV glass. A more serious decrease in transmittance has been found at the edge of PV glass, causing a significant decrease of Isc of the module. Meanwhile, PV module samples were prepared, some modules used normal solar cell, some modules used the high series resistance solar cell with normal EL image and some modules used the high series resistance solar cell. These PV module samples were accelerated degradation under damp-heat test to simulate the impact of high square resistance on the solder bond failure. The results showed that bright spot appeared along the busbar of the high series resistance solar cell with normal EL image module, there was a corresponding higher temperature of the bright spot shown in IR image. This indicates that the high series resistance solar cell with normal EL image may promote the risk of solder bond failure and corrosion of busbar in a hot and humid environment.
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