SnO2对低温烧结ZnBiMnNbO基高压压敏陶瓷的影响

doi:10.11896/cldb.21030033

材料导报

2022, Vol. 36

Issue (17): 21030033-5 https://doi.org/10.11896/cldb.21030033

无机非金属及其复合材料

SnO₂对低温烧结ZnBiMnNbO基高压压敏陶瓷的影响

宋欢欢¹, 赵鸣^1,*, 崔文正¹, 刘卓承¹, 陈华², 杜永胜²

1 内蒙古科技大学白云鄂博矿多金属资源综合利用重点实验室,内蒙古包头 014010
2 内蒙古科技大学理学院,内蒙古包头 014010

Effect of SnO₂ on the Low-temperature Sintered ZnBiMnNbO Based Varistor Ceramics for High-voltage Application

SONG Huanhuan¹, ZHAO Ming^1,*, CUI Wenzheng¹, LIU Zhuocheng¹, CHEN Hua², DU Yongsheng²

1 Key Laboratory of Integrated Exploitation of Bayan Obo Multi-Metal Resources, Inner Mongolia University of Science and Technology, Baotou 014010, Inner Mongolia, China
2 School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, Inner Mongolia, China

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摘要采用传统固相烧结工艺,在875 ℃低温保温3 h条件下制备了0%~0.75%(摩尔分数)SnO₂掺杂ZnBiMnNbO基压敏陶瓷。采用高精度分析天平、XRD、SEM、EDS及高精度源表等研究了SnO₂含量变化对所制备材料显微结构及电学特性的影响。结果表明:在所研究范围内,SnO₂含量升高增大了材料的相对密度,并促进含铌Bi₂Sn₂O₇焦绿石新相的形成。因此,材料的平均晶粒直径由4.38 μm减小至4.04 μm,压敏电压由727 V/mm升高到1 024.37 V/mm,非线性系数由32.37提升至52.64,漏电流密度由13.5 μA/cm²降低至1.55 μA/cm²。研究结果可为低成本、高非线性、高压压敏陶瓷的研制提供借鉴。

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关键词: ZnBiMnNbO基压敏陶瓷 SnO₂ 低温烧结高压

Abstract: 0%—0.75% (mole fraction) SnO₂ doped ZnBiMnNbO based varistor ceramics were produced by the traditional solid-state sintering procedure at low temperature of 875 ℃ for 3 h. The effect of SnO₂ concentration variation on the microstructure and properties of the fabricated material was investigated by high precision scale, XRD, SEM, EDS and high-precision power-source unit. The result shows that the increment of SnO₂ within the studied range can effectively improve the relative density and the formation of the Nb-containing Bi₂Sn₂O₇ pyrochlore as the new secondary phase. The latter microstructural change leads the average grain size to decrease from 4.38 μm to 4.04 μm, and the breakdown voltage to increase from 727 V/mm to 1 024.37 V/mm. Meanwhile, the nonlinear coefficient increases from 32.37 to 52.64, and the leakage current density decreases from 13.5 μA/cm² to 1.55 μA/cm². The results of this study can provide a good reference to the development of high-voltage varistors with high nonlinearity at low cost.

Key words: ZnBiMnNbO-based varistor ceramic SnO₂ low-temperature sintering high-voltage

出版日期: 2022-09-10 发布日期: 2022-09-10

ZTFLH:	TN304.93
	TN379

基金资助: 内蒙古自然科学基金(2020MS05037)

通讯作者: ^*philip@imust.edu.cn

作者简介: 宋欢欢,2021年6月毕业于内蒙古科技大学,获得材料工程硕士学位。毕业后进入潮州三环(集团)股份有限公司,任职工程师,主要从事陶瓷电子元器件烧结工艺改进工作。
赵鸣,内蒙古科技大学教授。2007年7月毕业于西北工业大学材料学专业,获博士学位。主要从事功能陶瓷及先进玻璃陶瓷的制备,表征以及器件开发。以第一作者在国内外重要期刊发表论文30多篇、合作论文100余篇,获发明专利5项。出版著作《科技论文写作基础》(科学出版社,2014)。

引用本文:

宋欢欢, 赵鸣, 崔文正, 刘卓承, 陈华, 杜永胜. SnO₂对低温烧结ZnBiMnNbO基高压压敏陶瓷的影响[J]. 材料导报, 2022, 36(17): 21030033-5.
SONG Huanhuan, ZHAO Ming, CUI Wenzheng, LIU Zhuocheng, CHEN Hua, DU Yongsheng. Effect of SnO₂ on the Low-temperature Sintered ZnBiMnNbO Based Varistor Ceramics for High-voltage Application. Materials Reports, 2022, 36(17): 21030033-5.

链接本文:

http://www.mater-rep.com/CN/10.11896/cldb.21030033 或 http://www.mater-rep.com/CN/Y2022/V36/I17/21030033

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