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材料导报  2026, Vol. 40 Issue (2): 24100235-13    https://doi.org/10.11896/cldb.24100235
  无机非金属及其复合材料 |
碳化硅单晶制备方法及缺陷控制研究进展
杨皓1,2, 李太1,2, 张广鑫1,2, 吕国强1,2,*, 陈秀华3
1 昆明理工大学冶金与能源工程学院,昆明 650093
2 云南省硅工业工程研究中心,昆明 650093
3 云南大学材料与能源学院,昆明 650091
Research Progress on Preparation Methods and Defect Control of Silicon Carbide Single Crystal
YANG Hao1,2, LI Tai1,2, ZHANG Guangxin1,2, LYU Guoqiang1,2,*, CHEN Xiuhua3
1 School of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
2 Yunnan Silicon Industry Engineering Research Center, Kunming 650093, China
3 School of Materials and Energy, Yunnan University, Kunming 650091, China
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摘要 碳化硅(SiC)作为第三代半导体具有禁带宽度大、载流子迁移率高、热导率高和稳定性良好等优异特性,在电力电子器件领域尤其是高温、高频、高功率等应用场景下有着巨大潜力。目前用于SiC晶体生长的主要技术包括物理气相传输(PVT)法、高温化学气相沉积(HTCVD)法和顶部籽晶溶液生长(TSSG)法。在SiC单晶生长和外延过程中,不可避免地会产生各种类型的缺陷,这些缺陷对半导体器件的性能会产生显著影响,具体表现为击穿电压降低、漏电流增加以及导通电阻变化等,这些性能的变化不仅会降低器件的效率和可靠性,还可能导致器件完全失效。因此,为了提高SiC半导体器件的良率和性能,在器件制造之前降低和控制SiC晶体生长过程中产生的各种缺陷变得非常重要。本文对当前SiC单晶的制备方法、SiC晶体生长过程中产生的缺陷及其检测技术进行了归纳总结,分析研究了SiC晶体生长过程中产生的缺陷之间的转化及影响因素,并讨论了降低SiC单晶缺陷密度的方法,最后对SiC单晶生长过程中缺陷的控制技术发展方向进行了展望。
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杨皓
李太
张广鑫
吕国强
陈秀华
关键词:  宽禁带半导体  碳化硅  晶体生长  缺陷  数值模拟    
Abstract: As the third generation semiconductor, silicon carbide (SiC) has excellent characteristics such as wide band gap, high carrier mobility, high thermal conductivity and good stability. It has great potential in the field of power electronic devices, especially in high temperature, high frequency, high power and other application scenarios. The primary techniques currently used for SiC crystal growth include physical vapor transport (PVT), high-temperature chemical vapor deposition (HTCVD), and top-seed solution growth (TSSG). During the growth and epitaxy of SiC single crystals, various types of defects inevitably arise, which can significantly affect the performance of semiconductor devices. This is manifested in reduced breakdown voltage, increased leakage current, and changes in on-resistance. Such performance variations not only diminish the efficiency and reliability of the devices but may also lead to complete device failure. Therefore, in order to improve the yield and performance of SiC semiconductor devices, it is very important to reduce and control various defects generated during the growth of SiC crystals before device fabrication. In this paper, the current preparation methods of SiC single crystal, the defects produced in the growth process of SiC crystal and their detection technology are summarized. The transformation and influencing factors between the defects produced in the growth process of SiC crystal are analyzed and studied, and the methods to reduce the defect density of SiC single crystal are discussed. Finally, the development direction of defect control technology in the growth process of SiC single crystal is prospected.
Key words:  wide bandgap semiconductors    silicon carbide    crystal growth    defects    numerical simulation
出版日期:  2026-01-25      发布日期:  2026-01-27
ZTFLH:  O781  
  O782  
  O77+1  
  O77+2  
  O77+9  
基金资助: 云南省重大科技专项(202302AB080004);云南大学“双一流”建设联合专项-重大项目(202201BF070001-018)
通讯作者:  *吕国强,昆明理工大学冶金与能源工程学院教授、博士研究生导师。主要研究方向为硅冶金与硅材料制备过程的传热传质。lvguoqiang_ok@aliyun.com   
作者简介:  杨皓,昆明理工大学冶金与能源工程学院硕士研究生,在吕国强老师的指导下进行研究。目前主要从事液相法碳化硅单晶生长过程数值模拟优化研究。
引用本文:    
杨皓, 李太, 张广鑫, 吕国强, 陈秀华. 碳化硅单晶制备方法及缺陷控制研究进展[J]. 材料导报, 2026, 40(2): 24100235-13.
YANG Hao, LI Tai, ZHANG Guangxin, LYU Guoqiang, CHEN Xiuhua. Research Progress on Preparation Methods and Defect Control of Silicon Carbide Single Crystal. Materials Reports, 2026, 40(2): 24100235-13.
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https://www.mater-rep.com/CN/10.11896/cldb.24100235  或          https://www.mater-rep.com/CN/Y2026/V40/I2/24100235
1 Lely J A. Berichte der Deutschen Keramischen Gesellschaft, 1955, 32, 229.
2 Tairov Y M, Tsvetkov V F. Journal of Crystal Growth, 1978, 43(2), 209.
3 Liang G, Qian H, Su Y, et al. China Foundry, 2023, 20(2), 159.
4 Yang Y B, Wang J, Wang Y M. Journal of Crystal Growth, 2018, 504, 31.
5 Nishizawa S I, Kato T, Kitou Y, et al. Materials Science Forum, 2004, 457-460(I), 29.
6 Meyer C, Philip P. Crystal Growth & Design, 2005, 5(3), 1145.
7 Chen X, Nishizawa S, Kakimoto K. Journal of Crystal Growth, 2010, 312(10), 1697.
8 Yan J Y, Chen Q S, Jiang Y N, et al. Journal of Crystal Growth, 2014, 385, 34.
9 Choi J W, Kim J G, Jang B K, et al. Materials Science Forum, 2019, 963, 18.
10 Zhang F, Yang K, Liu X, et al. In: 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors. China, 2020, pp. 19.
11 Tymicki E, Grasza K, Racka K, et al. Materials Science Forum, 2009, 615, 15.
12 Yeo I G, Lee T W, Park J H, et al. Materials Science Forum, 2011, 679, 40.
13 Shin H W, Lee H J, Kim H J, et al. Materials Science Forum, 2016, 858, 113.
14 Makarov Y, Litvin D, Vasiliev A, et al. Materials Science Forum, 2016, 858, 101.
15 Fan W, Qu H, Chang S I, et al. Materials Science Forum, 2019, 963, 22.
16 Zhang S, Fu G, Cai H, et al. Materials, 2023, 16(2), 767.
17 Xu B, Han X, Xu S, et al. Journal of Crystal Growth, 2023, 614, 127238.
18 Chen Y, Chen S, Yang B. Crystal Research and Technology, 2023, 58(12), 2300147.
19 Hoshino N, Kamata I, Tokuda Y, et al. Journal of Crystal Growth, 2017, 478, 9.
20 Ellison A, Magnusson B, Sundqvist B, et al. Materials Science Forum, 2004, 457, 9.
21 Tokuda Y, Makino E, Sugiyama N, et al. Journal of Crystal Growth, 2016, 448, 29.
22 Kim S, Suh S, Jeong J K, et al. Journal of Nanoscience and Nanotech-nology, 2017, 17(11), 8344.
23 Hoshino N, Kamata I, Tokuda Y, et al. Applied Physics Express, 2014, 7(6), 065502.
24 Kito Y, Makino E, Ikeda K, et al. Materials Science Forum, 2006, 527, 107.
25 Jeong S M, Kim K H, Yoon Y J, et al. Journal of Crystal Growth, 2012, 357, 48.
26 Kang Y, Yoo C H, Nam D H, et al. Journal of Crystal Growth, 2018, 485, 78.
27 Tokuda Y, Hoshino N, Kuno H, et al. Materials Science Forum, 2020, 1004, 5.
28 Okamoto T, Kanda T, Tokuda Y, et al. Materials Science Forum, 2020, 1004, 14.
29 Kamata I, Hoshino N, Tokuda Y, et al. Materials Science Forum, 2016, 858, 61.
30 Ujihara T, Maekawa R, Tanaka R, et al. Journal of Crystal Growth, 2008, 310(7-9), 1438.
31 Hofmann D H, Müller M H. Materials Science and Engineering: B, 1999, 61, 29.
32 Daikoku H, Kado M, Seki A, et al. Crystal Growth & Design, 2016, 16(3), 1256.
33 Harada S, Hatasa G, Murayama K, et al. Materials Science Forum, 2017, 897, 32.
34 Narumi T, Kawanishi S, Yoshikawa T, et al. Journal of Crystal Growth, 2014, 408, 25.
35 Hyun K Y, Taishi T, Suzuki K, et al. Materials Science Forum, 2018, 924, 43.
36 Kusunoki K, Kamei K, Okada N, et al. Materials Science Forum, 2006, 527, 119.
37 Kusunoki K, Okada N, Kamei K, et al. Journal of Crystal Growth, 2014, 395, 68.
38 Choi S H, Kim Y G, Shin Y J, et al. Materials Science Forum, 2018, 924, 27.
39 Mercier F, Nishizawa S. Journal of Crystal Growth, 2011, 318(1), 385.
40 Kawanishi S, Kamiko M, Yoshikawa T, et al. Crystal Growth & Design, 2016, 16(9), 4822.
41 Zhu C, Harada S, Seki K, et al. Crystal Growth & Design, 2013, 13(8), 3691.
42 Chen P C, Miao W C, Ahmed T, et al. Nanoscale Research Letters, 2022, 17(1), 30.
43 Heydemann V D, Schulze N, Barrett D L, et al. Applied Physics Letters, 1996, 69(24), 3728.
44 Nishiguchi T, Furusho T, Isshiki T, et al. In: 12th International Confe-rence on Silicon Carbide and Related Materials. Japan, 2009, pp. 600.
45 Ohtani N. Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications, 2021, 1, 1.
46 Matsuhata H, Sugiyama N, Chen B, et al. Microscopy, 2017, 66(2), 95.
47 Feng G, Suda J, Kimoto T. Physica B: Condensed Matter, 2009, 404(23-24), 4745.
48 Guziewski M, Montes de Oca Zapiain D, Dingreville R, et al. ACS Applied Materials & Interfaces, 2021, 13(2), 3311.
49 Wutimakun P, Buteprongjit C, Morimoto J. Journal of Crystal Growth, 2009, 311(14), 3781.
50 Ohtani N. ECS Transactions, 2011, 41(8), 253.
51 Yamamoto Y, Harada S, Seki K, et al. Applied Physics Express, 2012, 5(11), 115501.
52 Hong M H, Samant A V, Pirouz P. Philosophical Magazine A, 2000, 80(4), 919.
53 Zhao L. Nanotechnology and Precision Engineering, 2020, 3(4), 229.
54 Henry A, ul Hassan J, Bergman J P, et al. Chemical Vapor Deposition, 2006, 12(8-9), 475.
55 Benamara M, Zhang X, Skowronski M, et al. Applied Physics Letters, 2005, 86(2),021905.
56 Hassan J, Henry A, McNally P J, et al. Journal of Crystal Growth, 2010, 312(11), 1828.
57 Nakashima S, Mitani T, Tomobe M, et al. AIP Advances, 2016, 6(1), 015207.
58 Kimoto T. Progress in Crystal Growth and Characterization of Materials, 2016, 62(2), 329.
59 Das H, Melnychuk G, Koshka Y. Journal of Crystal Growth, 2010, 312(12-13), 1912.
60 Kimoto T, Itoh A, Matsunami H, et al. Journal of Applied Physics, 1997, 81(8), 3494.
61 Syväjärvi M, Yakimova R, Janzén E. Journal of Crystal Growth, 2002, 236(1-3), 297.
62 Zhang Z, Cai H, Gan D, et al. CrystEngComm, 2019, 21(7), 1200.
63 Isshiki T, Hasegawa M. Materials Science Forum, 2015, 821, 307.
64 Konishi K, Yamamoto S, Nakata S, et al. Journal of Applied Physics, 2013, 114(1),014504.
65 Hidalgo P, Ottaviani L, Idrissi H, et al. European Physical Journal-Applied Physics, 2004, 27(1-3), 231.
66 Chikvaidze G, Mironova-Ulmane N, Plaude A, et al. Latvian Journal of Physics and Technical Sciences, 2014, 51(3), 51.
67 Feng X, Zang Y. In: 3rd International Conference on Mechatronics and Information Technology (ICMIT). China, 2016, pp. 829.
68 Luo H, Li J, Yang G, et al. ACS Applied Electronic Materials, 2022, 4(4), 1678.
69 Mahajan S, Rokade M V, Ali S T, et al. Materials Letters, 2013, 101, 72.
70 Katsuno M, Ohtani N, Takahashi J, et al. Silicon carbide, iii-nitrides and related materials, pts 1 and 2, Pensl G, Morkoc H, Monemar B, Janzen E, Eds. 1998, pp. 837.
71 Steckl A J, Roth M D, Powell J A, et al. Applied Physics Letters, 1993, 62(20), 2545.
72 Fukushima Y, Chanthaphan A, Hosoi T, et al. Applied Physics Letters, 2015, 106(26), 261604.
73 Yao Y Z, Ishikawa Y, Sugawara Y, et al. Japanese Journal of Applied Physics, 2011, 50(7R), 075502.
74 Olivier E J, Neethling J H. International Journal of Refractory Metals and Hard Materials, 2009, 27(2), 443.
75 Zhu C, Harada S, Seki K, et al. Crystal Growth & Design, 2013, 13(8), 3691.
76 Maximenko S I, Freitas J A, Klein P B, et al. Applied Physics Letters, 2009, 94(9), 092101.
77 Senzaki J, Hayashi S, Yonezawa Y, et al. In: 2018 IEEE International Reliability Physics Symposium (IRPS). Burlingame, 2018, pp.3B. 3-1.
78 Ma P, Ni J, Sun J, et al. Applied Optics, 2020, 59(6), 1746.
79 Hundhausen M, Püsche R, Röhrl J, et al. Physica Status Solidi B-Basic Solid State Physics, 2008, 245(7), 1356.
80 Tajima M, Higashi E, Hayashi T, et al. In: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). Pittsburgh, 2006, pp. 711.
81 Peng H, Liu Y, Ailihumaer T, et al. ECS Transactions, 2021, 104(7), 147.
82 Feng X, Zang Y. In: 3rd International Conference on Mechatronics and Information Technology (ICMIT). China, 2016, pp. 829.
83 Matsuhata H, Yamaguchi H, Sekiguchi T, et al. Electrical Engineering in Japan, 2016, 197(3), 3.
84 Yazdanfar M, Leone S, Pedersen H, et al. In: 14th International Confe-rence on Silicon Carbide and Related Materials (ICSCRM 2011). Cleveland, 2012, pp. 109.
85 Dong L, Sun G S, Yu J, et al. In: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM). Japan, 2014, pp. 354.
86 Kojima K, Nishizawa S, Kuroda S, et al. Journal of Crystal Growth, 2005, 275(1-2), e549.
87 Kamata I, Tsuchida H, Jikimoto T, et al. Japanese Journal of Applied Physics, 2000, 39(12R), 6496.
88 Nakamura D, Kimoto T. Japanese Journal of Applied Physics, 2020, 59(9), 095502.
89 Dhanaraj G, Chen Y, Chen H, et al. In: Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2006 MRS Spring Meeting. San Francisco, 2006, pp. 157.
90 Wang H, Wu F, Byrappa S, et al. Applied Physics Letters, 2012, 100(17), 172105.
91 Harada S, Yamamoto Y, Seki K, et al. Acta Materialia, 2014, 81, 284.
92 Kimoto T. Japanese Journal of Applied Physics, 2015, 54(4), 040103.
93 Nakamura D, Gunjishima I, Yamaguchi S, et al. Nature, 2004, 430(7003), 1009.
94 Chen X F, Zhang F S, Yang X L, et al. Materials Science Forum, 2017, 897, 19.
95 Komatsu N, Mitani T, Hayashi Y, et al. Materials Science Forum, 2019, 963, 71.
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