Numerical Simulation Study of Residual Stress in AlN/Cu Brazed Joints
LYU Chuanyang1, LI Keqiao1, SHENG Jianxiang2, GU Xiaolong3, SHI Lei4, YANG Jianguo1, HE Yanming1,*
1 Institute of Process Equipment and Control Engineering, College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China 2 Zhejiang Jinshun Intelligent Equipment Co., Ltd., Jinhua 321000,Zhejiang, China 3 Zhejiang Province Key Laboratory of Soldering & Brazing Materials and Technology, Hangzhou 310030, China 4 Zhejiang YaTong Materials Co., Ltd., Hangzhou 310030, China
Abstract: Aluminum Nitride (AlN) ceramics have been considered as the promising material for packaging high-voltage and high-power insulated gate bipolar transistor (IGBT), where copper (Cu) coating is covered on the AlN ceramic to enhance the heat dissipation. However, the wide discrepancies in physical properties between AlN and Cu often enable severe residual stress after brazing. To address this issue, this study utilizes finite element numerical simulations to investigate the effects of loading, cooling rate, and filler alloy thickness on the residual stress in AlN/Cu brazed joints. The results show that the maximum axial stress in the AlN/Cu brazed joint appears on the AlN ceramic edge adjacent to the brazing filler alloy, while the maximum shear stress is on the interface between the AlN ceramic and brazing filler alloy, where is near the outer edge. Both the maximum axial and shear stresses increase with the decrease in loading, and the increase in cooling rate and filler alloy thickness. The stress distribution remains relatively consistent for all investigated conditions. The obtained results can provide the theoretical guidance for the high-reliability packaging of Cu-coated AlN ceramic substrates in high-power IGBTs.
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2024, Vol. 38 
