Abstract: With the rapid development of modern industry, more and more organic and heavy metal pollutants are discharged into the environment. Photocatalytic degradation is a clean, efficient and low-cost treatment method. g-C3N4, as an emerging catalyst driven by non-metallic visible light, has many advantages, such as cheap and easy to obtain, non-toxic and harmless. However, there are obvious problems, such as narrow response range of visible light, high photoelectron-hole recombination rate, resulting in low quantum yield and low photocatalytic efficiency. Studies have found that different types of semiconductors, such as partial metal sulfide, metal oxide and ternary compound, can form heterogeneous structures with g-C3N4. By regulating the morphology of semiconductors, they can form a good lattice match with g-C3N4 to different degrees, which is conducive to the transfer of electrons between two or more semiconductors. By constructing heterogeneous structures, the band gap width can be effectively reduced, the optical response range can be widened, the photoelectron-hole recombination rate can be reduced, and the photocatalytic efficiency can be improved. In this paper, the g-C3N4-based composite semiconductor materials commonly used in recent years are described. They all achieve good separation of electron and hole pair to varying degrees, and effectively eliminate the pollution of various organic compounds and heavy metals. Therefore, they are photocatalyst candidates with application value.
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